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AN-1126:
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Mounting M3G Series Converters |
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AN-1081:
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Application Note for the IRUH Series of Radiation Hardened, Ultra Low Dropout Linear Voltage Regulators |
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AN-1078:
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An Examination of Changes Imposed by Revised Hybrid Models When Calculating MTBF Values Using MIL-HDBK 217F, Notice 1 & 2 |
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AN-1068:
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Considerations for Designs Using Radiation-Hardened Solid State Relays |
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AN-1067:
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Design Considerations When Using Radiation-Hardened Small Signal Logic Level MOSFETs |
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AN-1016:
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Hermetic Surface Mount Device (SMD), Its Advantages and Solutions to Assembly Integration |
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AN-1001:
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A More Realistic Characterization of Power MOSFET Output Capacitance Coss |
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AN-999: |
International Rectifier's Total Dose Radiation Hardness Assurance (RHA) Test Program |
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AN-990: |
Application Characterization of IGBTs |
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AN-986: |
ESD Testing of MOS Gated Power Transistors |
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AN-985: |
Six-Output 600V MGDs Simplify 3-Phase Motor Drives |
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AN-983: |
IGBT Characteristics |
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AN-978: |
HV Floating MOS-Gate Driver ICs |
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AN-968: |
Selecting and Designing in The Right Schottky |
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AN-957: |
Measuring HEXFET® Characteristics |
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AN-955: |
Protecting IGBTs and MOSFETs from ESD |
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AN-950: |
Transformer-Isolated Gate Driver Provides Very Large Duty Cycle Ratios |
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AN-949: |
Current Ratings of Power Semiconductors |
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AN-948: |
Linear Power Amplifier Using Complementary HEXFET® power MOSFETs |
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AN-944: |
Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs |
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AN-941: |
Paralleling HEXFET® power MOSFETs |
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AN-940: |
How P-Channel HEXFETs Can Simplify Your Circuit |
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AN-937: |
Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs |
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AN-936: |
The Do's and Don'ts of Using MOS-Gated Transistors |
