EL SEGUNDO, Calif. May 2004 - International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced a control and synchronous switching chip set for high-frequency DC-DC converters powering next-generation Intel® and AMD processors in high-end advanced servers and desktop computers. Other applications include point-of-load (POL) DC-DC conversion in telecom and datacom systems.

The chip set pair delivers 84.5% efficiency at 90A in a four-phase 1U (1.75-in. height) VRM outline system switching at 750kHz per phase and 87% efficiency at 150A in an eight-phase embedded VRD10.2 design switching at 400kHz per phase.

The first device is the monolithic IRF6691 DirectFETKY™, which integrates a Schottky diode and synchronous MOSFET into a single package to enable an efficiency improvement of 1.1% at 1MHz per phase at full load compared to other existing highest-performing 20V synchronous FETs on the market when using the same control FET. The IRF6691 also features a typical RDS(on) of 1.2 mOhm at 10VGS (1.8 mOhm at 4.5VGS ) and a typical Qrr of 26nC, providing the best thermal performance with lower reverse recovery losses and reduced overall part count.

The second device is the IRF6617 DirectFET® HEXFET® Control MOSFET. Specifically tailored for control FET switching, the IRF6617 features a very low total gate charge (Qg of 11nC), delivering a 33% reduction in on-resistance times gate charge product of 87mOhm-nC at 4.5VGS compared to previous 30V devices.

"IR continues to improve critical parameters determining performance of power MOSFETs beyond device on-resistance and switching losses. IR's industry-leading DirectFET packaging technology and latest monolithic die technology are setting the standard for efficiency in DC-DC conversion in today's most advanced information technology applications," said John Lambert, Product Marketing Engineer.

Patented DirectFET® Packaging Technology

Both devices feature International Rectifier's patented DirectFET packaging technology that presents a whole new set of design advantages not previously delivered by standard plastic discrete packages. By deploying a new dual-side cooling design, the DirectFET power MOSFET family effectively doubles the current handling capacity of high frequency DC-DC buck converters powering advanced processors.

Part Number	Package	BVDSS	RDS(on) max. @10V	RDS(on) max. @4.5V	VGS	ID @ Tc=25ºC	QG typ	Qrr typ
		(V)	(mOhm)	(mOhm)	(V)	(A)	(nC)	(nC)
IRF6617 DirectFET® MOSFET	DirectFET	30	8.1	10.3	20	55	11	7.2
IRF6691 DirectFETKY™ MOSFET and Schottky Diode	DirectFET	20	1.8	2.5	12	180	47	26

For more information related to DirectFET MOSFET Packaging Technology visit the DirectFET Home page.

Availability and Pricing

Both devices are available immediately. The IRF6691 DirectFETKY device is US $1.49 each and the IRF6617 DirectFET MOSFET is US $0.87 each; pricing for both devices is in 10,000-unit quantities.