EL SEGUNDO, Calif. February 2004 - International Rectifier (NYSE: IRF) today introduced three new devices to their DirectFET® MOSFET family. The new 20V N-channel devices are optimized for VRM 10 power systems and high frequency, high current DC-DC converters for next generation Intel® and AMD processors in high-end desktop computers and servers, as well as advanced telecom and datacom systems.

The IRF6623 features enhanced control MOSFET performance, with a 30% reduction in device on-resistance and gate charge product, and is 50% smaller than other high-performing 20V control MOSFETs on the market. In addition, the RDS(on) and Qg product at 4.5V is 48.4mOhm-nC, and the Miller charge is 4.0nC, reducing switching losses.

IRF6620 is ideal for synchronous MOSFET applications up to 35A. The IRF6620 combines very low Qg, Qgd, and QRR with a 30% improvement in RDS(on) compared to other high-performing 20V synch MOSFETs on the market. Typical RDS(on) for this product is 2.1mOhm (2.7mOhm max.) at 10V.

The IRF6609 is designed for the highest performance in high-current (33A or more) synchronous MOSFET applications. The IRF6609 combines very low gate charge (Qg), Miller charge (Qgd) and ultra-low reverse recovery charge (QRR) with typical device on-resistance (RDS(on)) of 1.6mOhm (2.0mOhm max.) at 10V.

"The DirectFET MOSFET product line now includes 20 and 30 volt products with a wider selection of die sizes, giving designers more choices for circuit optimization," said Carl Blake, Director of Technical Marketing, Computing and Communications group.

"The 'metal can' construction of the DirectFET package is a key enabling feature. It reduces die-free package resistance and enables double-sided cooling. The new package presents a whole new set of design advantages not previously available in standard plastic discrete packages," Blake continued.

Part Number	Package	BVDSS(V)	RDS(on) typ. @10V (mOhms)	RDS(on) max. @10V (mOhms)	RDS(on) typ. @4.5V (mOhms)	RDS(on) max. @4.5V (mOhms)	VGS(V)	ID @ Tc=25ºC (A)	QG typ. (nC)	QGD typ. (nC)
IRF6623	DirectFET	20	4.4	5.7	7.5	9.7	20	55	11.0	4.0
IRF6620	DirectFET	20	2.1	2.7	2.8	3.6	20	150	28.0	8.8
IRF6609	DirectFET	20	1.6	2.0	2.0	2.6	20	150	46	15

For more information related to DirectFET MOSFET Packaging Technology visit the DirectFET Home page.

Availability and Pricing

The new DirectFET MOSFETs are available now. Pricing for the IRF6620 is US $0.98 each, the IRF6623 is US $0.78 each and the IRF6609 is US $1.25 each in 10,000-unit quantities.