EL SEGUNDO, Calif. September 2003 - International Rectifier, IR® (NYSE: IRF) today introduces the smallest control and synchronous MOSFET chip set for existing- and next-generation VRM10.x high-current synchronous buck converters where small size, high efficiency and maximum thermal conduction are mandatory. The IRF6608 control MOSFET has 8.5mOhms typical on-resistance (RDS(on)), while the IRF6618 synchronous MOSFET has 1.7mOhms typical on-resistance. The new devices are housed in the DirectFET® package.

The IRF6608 is 50% smaller than the standard SO-8 package, and is the first HEXFET® MOSFET housed in the new double-side-cooled, surface-mount DirectFET "S" package. The profile is 0.7mm, compared to 1.75mm for SO-8. In addition, the new IRF6608 has as much as 10% better on-resistance, reduced gate charge (QG) and gate-to-drain charge (QGD) characteristics compared to similar control MOSFETs on the market, delivering over 2% more overall efficiency, making it an ideal control MOSFET.

The IRF6618 has a typical on-resistance of 1.7mOhms and a maximum of 2.2mOhms, a 25% improvement compared to similar devices on the market, and is ideal for the synchronous MOSFET application, where low conduction loss is most important. The IRF6618 can also be used for secondary side synchronous rectification in high current, isolated DC-to-DC converters.

The new chip set enables designers to make a very low profile power converter (0.98-in.) for 1U (1.75-in. height) rack sized server systems that meet VRM 10.x specifications. The new chip set is also suitable for buck converters in servers and point-of-load converters in telecom and netcom systems.

Carl Blake, International Rectifier Marketing Manager for the Computing and Communications Business Unit said, "The new IRF6608 and IRF6618 MOSFETs in the DirectFET package give circuit designers a revolutionary new tool in the battle to remove heat in tiny spaces, while increasing efficiency and current-handling capability."

New IRF6608 and IRF6618 30V MOSFETs in the DirectFET® Package
Part Number	Function	RDS(on)			VGS	IDTcase=25°C	QG typ.	QGD typ.	Outline(mm)
		@10V Typ.	@10V Max.	@4.5V Max.
IRF6608	Control MOSFET	8.5mOhms	10mOhms	13mOhms	12V	52A	15nC	4.9nC	4.8 x 3.8
IRF6618	Synch MOSFET	1.7mOhms	2.2mOhms	3.4mOhms	20V	150A	46nC	15nC	6.3 x 4.9

DirectFET power MOSFETs have been added to the myPOWER online selector guide. Go to http://www.irf.com/design-center/ipowir/ip2001/index.html

Availability and Pricing

The new DirectFET MOSFETs are available immediately. Pricing for the IRF6608 is US $1.03 each while the IRF6618 is US $1.52 each in 10,000-unit quantities.

For more information related to DirectFET MOSFET Packaging Technology visit the DirectFET Home page.

High Resolution JPEGs are available in the Press Room.