DirectFET®; MOSFET: Medium Can Substrate Layout

MX Medium Can Outline, Substrate Layout
MX Stencil Design
MX-outline device outline
The relative pad positions are controlled to an accuracy of ±0.065mm.
MX-outline substrate layout
Aperture Tolerance = ±0.025mm
Positional Tolerance = ±0.075mm
NOTE: Gate and source pads on the substrate are oversized by 0.025mm (0.001”) on each side. Drain pads are thickened by 0.500mm (0.020”).

MT Medium Can Outline, Substrate Layout
MT Stencil Design
MT-outline device outline
The relative pad positions are controlled to an accuracy of ±0.065mm.
MT-outline substrate layout
Aperture Tolerance = ±0.025mm
Positional Tolerance = ±0.075mm
NOTE: Gate and source pads on the substrate are oversized by 0.025mm (0.001”) on each side. Drain pads are thickened by 0.500mm (0.020”).

MN Medium Can Outline, Substrate Layout
MN Stencil Design
MN-outline device outline
The relative pad positions are controlled to an accuracy of ±0.065mm.
MN-outline substrate layout
Aperture Tolerance = ±0.025mm
Positional Tolerance = ±0.075mm
NOTE: Gate and source pads on the substrate are oversized by 0.025mm (0.001”) on each side. Drain pads are thickened by 0.500mm (0.020”).

MP Medium Can Outline, Substrate Layout
MP Stencil Design
MP-outline device outline
The relative pad positions are controlled to an accuracy of ±0.065mm.
MP-outline substrate layout
Aperture Tolerance = ±0.025mm
Positional Tolerance = ±0.075mm
NOTE: Gate and source pads on the substrate are oversized by 0.025mm (0.001”) on each side. Drain pads are thickened by 0.500mm (0.020”).

MQ Medium Can Outline, Substrate Layout
MQ Stencil Design
MQ-outline device outline
The relative pad positions are controlled to an accuracy of ±0.065mm.
MQ-outline substrate layout
Aperture Tolerance = ±0.025mm
Positional Tolerance = ±0.075mm
NOTE: Gate and source pads on the substrate are oversized by 0.025mm (0.001”) on each side. Drain pads are thickened by 0.500mm (0.020”).

MZ Medium Can Outline, Substrate Layout
MZ Stencil Design
MZ-outline device outline
The relative pad positions are controlled to an accuracy of ±0.065mm.
MZ-outline substrate layout
Aperture Tolerance = ±0.025mm
Positional Tolerance = ±0.075mm
NOTE: Gate and source pads on the substrate are oversized by 0.025mm (0.001”) on each side. Drain pads are thickened by 0.500mm (0.020”).

IR’s proprietary DirectFET®; technology is covered by US Patent 6,624,522 and other US and foreign pending patent applications.