IR’s New 1200V IGBTs Deliver Higher Power Density and Increased Efficiency for Motor Drive and UPS Applications
EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced a family of rugged 1200V ultra-fast insulated-gate bipolar transistors (IGBTs) optimized for industrial motor drive and UPS systems.
The new devices leverage IR’s field stop trench ultra-thin wafer technology that delivers lower conduction and switching losses. Co-packaged with a soft recovery low Qrr diode and featuring a 10us minimum short circuit time rating, the devices are optimized for rugged industrial applications.
“These new 1200V trench IGBTs feature very low Vce(on) and low switching losses while offering higher system efficiency and rugged transient performance for increased reliability making them well suited to harsh industrial environments,” said Llewellyn Vaughan-Edmunds, IGBT Product Marketing Manager, IR’s Energy Saving Products Business Unit.
The packaged devices cover a broad current range from 10 – 50A. Other key performance benefits include Tjmax of 150°C, positive VCE(on) temperature coefficient for easy paralleling and low VCE(on) to reduce power dissipation and achieve higher power density. Die products are also available.
Datasheets can be found via the part number links located in the table above. The IGBT selection tool can be accessed directly at mypower.irf.com/IGBT. For information about die products, please contact email@example.com.