IR’s Family of TSOP-6 HEXFET® MOSFETs Offer Cost-Effective, Flexible Solution for Low Power Applications

EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today announced the introduction of an extensive portfolio of devices featuring IR’s latest low-voltage HEXFET® MOSFET silicon in a TSOP-6 package for low power applications including load switch, charge and discharge switches for battery protection and inverter switches.

Featuring very low on-state resistance (RDS(on)) to significantly cut conduction losses, the new power MOSFETs are available as 20 V and 30 V devices in N-and P-Channel configurations with a maximum gate drive from 12Vgs to 20Vgs.

“IR’s new portfolio of power MOSFETs in a TSOP-6 package complement our existing devices housed in SOT-23 and SO-8 packages to provide customers more flexibility in designing their systems. As a result of the low RDS(ON) of this platform, these devices can be used to replace MOSFETs in larger packages to save board space and reduce system cost,” said Stéphane Ernoux, Director, IR’s Power Management Devices Business Unit.

All of the new devices are MSL1 and RoHS compliant containing no lead, bromide or halogen.


Part Number
(- TRPbF)
BVDSS Max VGS Id max @ 25ºC Typ/Max RDS(on) @ ...(mOhms)
10V 4.5V 2.5V
IRFTS9342 -30V 20V 5.9A 31/39 53/66 NA
IRLTS2242 -20V 12V 6.9A N/A 26/32 45/55
IRLTS6342 30V 12V 7.8A N/A 12/20 15/24
IRFTS8342 30V 20V 8.2A 15/19 22/29 N/A

Datasheets are availabel via the part number links found in the table above. MOSFET product selection tool are available throughout the site.

Availability and Pricing

Pricing for the IRFTS9342TRPBF begins at US $0.119 each in 1,000 unit quantities. Production orders are available immediately. Prices are subject to change.