IR HiRel Product Families

 

IRHNA6S7160

Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package

Active

Features

Single event effect (SEE) hardened (up to LET of 85 MeV·cm2/mg)

Low RDS(on)

Low total gate charge

Simple drive requirements

Hermetically sealed

Surface mount

Ceramic Package

Light weight

ESD rating: Class 3A per MIL-STD-750, Method 1020

Potential Applications

Isolated DC-DC converters

Motor drives

Electric propulsion

Thermal management

PCN Alert

PCN IRHNA6S7160 Electrical Characteristics MOSFET

PCN IRHNA6S7160 Electrical Characteristics MOSFET

Specifications

ParameterValue
BVDSS100
ID @ 100C (A)56
RDS(on) @ 25C (pre-Irradiation)0.01
PackageSMD-2
Base Part StatusActive
GenerationR6
DLA QualifiedNo
Optional Total Dose Ratings100 300
Total Inductance4.0
SEE HardenedYes
Forward Voltage Max1.2
ESD Voltage Range4,000 to 7,999
ESD ClassClass 3A
Power Dissipation (W)250
Die Size6
ID @ 25C (A)56
CircuitDiscrete
Total Dose100
|BVDSS|100
PolarityN
SMD-2

Part # IRHNA6S7160

Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package

DescriptionPart NumberStatusStandard Pack Quantity
SMD-2, 100 krad(Si) TID, QIRLIRHNA6S7160SCSACTIVE1
SMD-2, 100 krad(Si) TID, COTSIRHNA6S7160ACTIVE1
SMD-2, 300 krad(Si) TID, COTSIRHNA6S3160PENDING1
SMD-2, 100 krad(Si) TID, COTS, On DBC carrierIRHNA6S7160SCSDACTIVE1

Package Support