IR HiRel Product Families |
Rad hard, 200V, 35A, single, N-channel MOSFET, R5 in a TO-254AA package
Call Factory
Single event effect (SEE) hardened
Identical pre- and post-electrical test conditions
Repetitive avalanche ratings
Dynamic dv/dt ratings
Simple drive requirements
Ease of paralleling
Hermetically sealed
Ceramic eyelets
Electrically isolated
Light weight
DC-DC converters
Electric propulsion
Motor drives
EOL, IRHM57260SE Hi-Rel Single N-Channel SEE Hardened MOSFET
Parameter | Value |
---|---|
BVDSS | 200 |
ID @ 100C (A) | 35 |
RDS(on) @ 25C (pre-Irradiation) | 0.044 |
Package | TO-254AA |
Base Part Status | Call Factory |
Generation | R5 |
DLA Qualified | No |
Optional Total Dose Ratings | 100 |
RoHS | No |
Total Inductance | 6.8 |
SEE Hardened | SEE Hard |
Forward Voltage Max | 1.2 |
ESD Voltage Range | 8,000 to 15,999 |
ESD Class | Class 3B |
Halogen-Free | Yes |
Power Dissipation (W) | 250 |
Die Size | 6 |
ID @ 25C (A) | 35 |
Circuit | Discrete |
Total Dose | 100 |
|BVDSS| | 200 |
Polarity | N |
Technology | Hi-Rel DISCRETE |
IR has a long history of providing high-reliability, radiation hardened power management solutions for space flight with products used in over 2000 space programs from launchers to satellites to space exploration vehicles.
Base Part | 200 | 35 | 0.044 | TO-254AA | Call Factory | R5 | Discrete | 6 | No | 1.2 | 35 | 100 | N | 250 | 100 | 6.8 | Yes | Hi-Rel DISCRETE | Class 3B | 8,000 to 15,999 | ||
200 | 35 | 0.038 | SMD-2 | Active | R5 | 2N7473U2 | Discrete | 6 | Yes | 1.2 | 53.5 | 100 | N | 250 | 100 | 4.0 | Yes | Hi-Rel DISCRETE | Class 3B | 8,000 to 15,999 | ||
200 | 28 | 0.049 | TO-254AA Tabless SMD | Last Time Buy Expired | R5 | Discrete | 6 | No | 1.2 | 35 | 100 | N | 208 | 100 | 6.8 | Class 3B | 8,000 to 15,999 | |||||
200 | 29 | 0.044 | TO-254AA Tabless Low Ohmic | Active | R5 | Discrete | 6 | No | 1.2 | 45 | 100 | N | 208 | 100 | 6.8 | Yes | Hi-Rel DISCRETE | Class 3B | 8,000 to 15,999 | |||
200 | 35 | 0.044 | TO-254AA | Obsolete | R5 | Discrete | 6 | 35 | 300 500 1000 | N | 250 | 100 | Class 3B | 8,000 to 15,999 | ||||||||
200 | 29 | 0.044 | TO-254AA Low Ohmic | Active | R5 | 2N7476T1 | Discrete | 6 | Yes | 1.2 | 45 | 100 | N | 208 | 100 | 6.8 | Yes | Hi-Rel DISCRETE | Class 3B | 8,000 to 15,999 | ||
200 | 27 | 0.07 | SMD-2 | Active | R5 | Discrete | 6 | No | 1.8 | 43 | 100 | N | 300 | 100 | 4.0 | Class 3B | 8,000 to 15,999 | |||||
200 | 35 | 0.038 | SMD-2 | Obsolete | R5 | Discrete | 6 | 55 | 300 500 1000 | N | 300 | 100 | Class 3B | 8,000 to 15,999 | ||||||||
200 | 29 | 0.044 | TO-254AA Tabless SMD | Call Factory | R5 | Discrete | 6 | No | 1.2 | 45 | 100 | N | 208 | 100 | 6.8 | Yes | Hi-Rel DISCRETE | Class 3B | 8,000 to 15,999 |
Part # IRHM57260SE
Rad hard, 200V, 35A, single, N-channel MOSFET, R5 in a TO-254AA package
Description | Part Number | Status | Standard Pack Quantity |
---|---|---|---|
TO-254AA, 100 krad(Si) TID, QIRL, Lead form down | IRHM57260SESCSA | CALL_FACTORY | 1 |
TO-254AA, 100 krad(Si) TID, COTS | IRHM57260SE | CALL_FACTORY | 1 |
TO-254AA, 100 krad(Si) TID, QIRL | IRHM57260SESCV | CALL_FACTORY | 1 |
TO-254AA, 100 krad(Si) TID, QIRL, Lead form up | IRHM57260SESCSB | CALL_FACTORY | 1 |
TO-254AA, 100 krad(Si) TID, QIRL | IRHM57260SESCS | CALL_FACTORY | 1 |