| IR HiRel Product Families |
25V Dual N Channel HEXFET Power MOSFET in a Dual PQFN 5 x 4 package
Obsolete
Control and synchronous MOSFETs in one package
Low charge control MOSFET (9.7nC typical)
Low RDSON synchronous MOSFET (<.8mOhms)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant
Halogen-Free
MSL1
FastIRFET™
| Parameter | Value |
|---|---|
| Base Part Status | Obsolete |
| VBRDSS (V) | 25 |
| Package | PQFN 5 x 4 |
| VGs Max (V) | 20 |
| Circuit | Dual N |
| RDS(on) Max 10V (mOhms) | 1.8 |
| RDS(on) Max 4.5V (mOhms) | 1.4 |
| Qual Level | Industrial |
| Qg Typ (nC) | 23 |
| Rth(JA) (C/W) | 40 |
| RoHS | Yes |
| Halogen-Free | Yes |
| 1k Budgetary Pricing | 0.854 |
| MSL | 1 |
| TJ Max | 150 |
| Technology | Trench Mosfet |
Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs
Discrete Power Quad Flat No-Lead (PQFN) Inspection Application Note
Audio Power Quad Flat Pack No-Leads (PQFN) Board Mounting Application Note
Discrete Power Quad Flat Pack No-Leads (PQFN) Board Mounting Application Note
Class D Amplifier Peformance Relationship to MOSFET Parameters
DirectFET® Technology: A Mechanically Robust Surface Mount Technology
Design Considerations for a New Generation Mid-voltage Power MOSFET Technology
Effect and Utilization of Common Source Inductance in Synchronous Rectification
Using Simulation to Estimate MOSFET Junction Temperature in a Circuit Application
Part # IRFH4257DTRPBF
25V Dual N Channel HEXFET Power MOSFET in a Dual PQFN 5 x 4 package
| Description | Part Number | Status | Standard Pack Quantity |
|---|---|---|---|
| Tape and Reel | IRFH4257DTRPBF | OBSOLETE | 4000 |
