| IR HiRel Product Families |
IRHYB9A97230CM
Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
Preliminary
Specifications
| Parameter | Value |
|---|---|
| JEDEC Part Number | 2N7661D5 |
| BVDSS | -200 |
| ID @ 25C (A) | 14 |
| RDS(on) @ 25C (pre-Irradiation) | 0.175 |
| Package | TO-257AA Tabless Low Ohmic |
| Base Part Status | Preliminary |
| Generation | R9 |
| DLA Qualified | QPL |
| Optional Total Dose Ratings | 300 |
| Total Inductance | 6.8 |
| SEE Hardened | Yes |
| Forward Voltage Max | -1.3 |
| ESD Voltage Range | 2,000 to 3,999 |
| ESD Class | Class 2 |
| Power Dissipation (W) | 208 |
| Die Size | 3 |
| ID @ 100C (A) | 9 |
| Circuit | Discrete |
| Total Dose | 100 |
| |BVDSS| | -200 |
| Polarity | P |
TO-257AA Tabless Low Ohmic
Part # JANSF2N7661D5
Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
| Description | Part Number | Status | Standard Pack Quantity |
|---|---|---|---|
| TO-257AA Tabless Low Ohmic, 300 krad(Si) TID, COTS | IRHYB9A93230CM | PRELIMINARY | 1 |
| TO-257AA Tabless Low Ohmic, 100 krad(Si) TID, COTS | IRHYB9A97230CM | PRELIMINARY | 1 |
| TO-257AA Tabless Low Ohmic, 100 krad(Si) TID, QIRL | JANSR2N7661D5 | PRELIMINARY | 1 |
| TO-257AA Tabless Low Ohmic, 300 krad(Si) TID, QIRL | JANSF2N7661D5 | PRELIMINARY | 1 |