| IR HiRel Product Families |
IRHYS9A97130CM
Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic packag
Active
Specifications
| Parameter | Value |
|---|---|
| JEDEC Part Number | 2N7660T3 |
| BVDSS | -100 |
| ID @ 25C (A) | -23 |
| RDS(on) @ 25C (pre-Irradiation) | 0.076 |
| Package | TO-257AA Low Ohmic |
| Base Part Status | Active |
| Generation | R9 |
| DLA Qualified | Yes |
| Optional Total Dose Ratings | 300 |
| Total Inductance | 6.8 |
| SEE Hardened | Yes |
| Forward Voltage Max | -1.3 |
| ESD Voltage Range | 2,000 to 3,999 |
| ESD Class | Class 2 |
| Power Dissipation (W) | 75 |
| Die Size | 3 |
| ID @ 100C (A) | -15 |
| Circuit | Discrete |
| Total Dose | 100 |
| |BVDSS| | -100 |
| Polarity | P |
TO-257AA Low Ohmic
Part # IRHYS9A97130CMSCS
Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic packag
| Description | Part Number | Status | Standard Pack Quantity |
|---|---|---|---|
| TO-257AA Low Ohmic, 100 krad(Si) TID, COTS | JANSR2N7660T3 | ACTIVE | 1 |
| TO-257AA Low Ohmic, 300 krad(Si) TID, COTS | JANSF2N7660T3 | ACTIVE | 1 |
| TO-257AA Low Ohmic, 100 krad(Si) TID, QIRL | IRHYS9A97130CMSCS | PRELIMINARY | 1 |
| TO-257AA Low Ohmic, 100 krad(Si) TID, COTS | IRHYS9A97130CM | ACTIVE | 1 |
| TO-257AA Low Ohmic, 300 krad(Si) TID, COTS | IRHYS9A93130CM | ACTIVE | 1 |