IR HiRel Product Families |
Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic packag
Active
Parameter | Value |
---|---|
JEDEC Part Number | 2N7660T3 |
BVDSS | -100 |
ID @ 25C (A) | -23 |
RDS(on) @ 25C (pre-Irradiation) | 0.076 |
Package | TO-257AA Low Ohmic |
Base Part Status | Active |
Generation | R9 |
DLA Qualified | Yes |
Optional Total Dose Ratings | 300 |
Total Inductance | 6.8 |
SEE Hardened | Yes |
Forward Voltage Max | -1.3 |
ESD Voltage Range | 2,000 to 3,999 |
ESD Class | Class 2 |
Power Dissipation (W) | 75 |
Die Size | 3 |
ID @ 100C (A) | -15 |
Circuit | Discrete |
Total Dose | 100 |
|BVDSS| | -100 |
Polarity | P |
Part # IRHYS9A97130CMSCS
Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic packag
Description | Part Number | Status | Standard Pack Quantity |
---|---|---|---|
TO-257AA Low Ohmic, 100 krad(Si) TID, COTS | JANSR2N7660T3 | ACTIVE | 1 |
TO-257AA Low Ohmic, 300 krad(Si) TID, COTS | JANSF2N7660T3 | ACTIVE | 1 |
TO-257AA Low Ohmic, 100 krad(Si) TID, QIRL | IRHYS9A97130CMSCS | PRELIMINARY | 1 |
TO-257AA Low Ohmic, 100 krad(Si) TID, COTS | IRHYS9A97130CM | ACTIVE | 1 |
TO-257AA Low Ohmic, 300 krad(Si) TID, COTS | IRHYS9A93130CM | ACTIVE | 1 |