Application Notes
Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs
Discrete Power Quad Flat Pack No-Leads (PQFN) Board Mounting Application Note
IR HiRel Product Families |
20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package
Obsolete
Parameter | Value |
---|---|
VBRDSS (V) | 20 |
RDS(on) 10V P-Ch (mOhms) | 105.0 |
Base Part Status | Obsolete |
Circuit | 1N-1P |
ID @ TA = 25C N-Ch (A) | 2.7 |
ID @ TA = 25C P-Ch (A) | -2.2 |
MSL | 2 |
Package | TSOP-6 |
Power Dissipation @ TA = 25C (W) | 0.96 |
Qg Typ N-Ch (nC) | 4 |
Qg Typ P-Ch (nC) | 3.6 |
Qgd Typ N-Ch (nC) | 0.95 |
Qgd Typ P-Ch (nC) | 0.66 |
Qual Level | Consumer |
Rth(JA) (C/W) | 130 |
VGs Max (V) | 12 |
ID @ TA = 70C P-Ch (A) | -1.7 |
RoHS | Yes |
ID @ TA = 70C N-Ch (A) | 2.2 |
Halogen-Free | Yes |
1k Budgetary Pricing | 0.16 |
Environment Options | PbF and Leaded |
RDS(on) 4.5V P-Ch (mOhms) | 135.0 |
RDS(on) 2.7V N-Ch (mOhms) | 120.0 |
RDS(on) 2.7V P-Ch (mOhms) | 220.0 |
RDS(on) 4.5V N-Ch (mOhms) | 90.0 |
Technology | Trench Mosfet |
Part # IRF5851TRPBF
20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package
Description | Part Number | Status | Standard Pack Quantity |
---|---|---|---|
Similar to IRF5851TR with Lead-Free Packaging. | IRF5851TRPBF | OBSOLETE | 3000 |