EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today announced the introduction of a family of 25 V and 30 V devices featuring IR’s latest HEXFET® MOSFET silicon in a new performance PQFN 3 x 3 package that delivers a high density, reliable and efficient solution for DC-DC converters in telecom, netcom, and high-end desktop and notebook computer applications.

As a result of improved manufacturing technology, IR’s new performance PQFN 3 x 3 package enables up to 60 percent higher load current capability than standard PQFN 3 x 3 devices in the new compact footprint while overall package resistance is significantly reduced to deliver extremely low on-state resistance (RDS(on)). In addition to the low RDS(on), the new performance PQFN package offers enhanced thermal conductivity as well as improved reliability and is qualified to industrial standard and moisture sensitivity level 1 (MSL1).

The performance PQFN package technology is also applied to 5 x 6 mm footprint devices enabling designs requiring more current without the need for additional footprint compared to standard PQFN 5 x 6 devices.

The family includes devices optimized for use as control MOSFETs featuring low gate resistance (Rg) to reduce switching losses. For synchronous MOSFET use, devices are available as a FETKY® (monolithic FET and Schottky diode) configuration to offer enhanced efficiency and EMI performance by reducing reverse recovery time.

“The new family of performance PQFN package devices offers a high density, highly reliable and flexible solution optimized for DC-DC applications. Moreover, by expanding IR’s PQFN offering, customers can now select from many package combinations to achieve the optimal result for their design,” said George Feng, marketing engineer for IR’s Power Management Devices Business Unit.

With a low profile of less than 1 mm, the devices are compatible with existing Surface Mount Techniques, feature industry-standard footprint and are RoHS compliant.

Specifications

Part Number	Package	BVDSS (V)	VGS max(V)	RDSon @ 10V (mOhms)		RDSon @ 4.5V (mOhms)		Qg typ. @ 4.5V (nC)	Extra die feature
				Typ.	Max	Typ.	Max
IRFHM831	PQFN 3x3	30V	±20V	6.6	7.8	10.7	12.6	7.3	Low Rg
IRFHM830D	PQFN 3x3	30V	±20V	3.4	4.3	5.7	7.1	13	FETky
IRFHM830	PQFN 3x3	30V	±20V	3.0	3.8	4.8	6.0	15
IRFH5303	PQFN 5x6	30V	±20V	3.6	4.2	5.7	6.8	15	Low Rg
IRFH5304	PQFN 5x6	30V	±20V	3.8	4.5	5.8	6.8	16
IRFH5306	PQFN 5x6	30V	±20V	6.9	8.1	11.0	13.3	7.8
IRFH5255	PQFN 5x6	25V	±20V	5.0	6.0	8.8	10.9	7.0	Low Rg
IRFH5250D	PQFN 5x6	25V	±20V	1.0	1.4	1.7	2.2	39	FETky

Datasheets and a MOSFET product selection tools are available using the links above.

Availability and Pricing

Pricing for the IRFHM830D begins at US $0.43 each in 10,000-unit quantities. Production orders are available immediately. Prices are subject to change.