IR Introduces Industry’s First Commercially Available GaN-based iP2010 and iP2011 Integrated Power Stage Devices Utilizing IR’s Revolutionary GaN-based Technology Platform, GaNpowIR™
EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced the industry’s first family of commercial integrated power stage products utilizing IR’s revolutionary Gallium Nitride (GaN)-based power device technology platform. The iP2010 and iP2011 family of devices is designed for multiphase and point-of-load (POL) applications including servers, routers, switches and general purpose POL DC-DC converters.
The iP2010 and iP2011 integrate a highly sophisticated, ultra fast PowIRtuneTM driver IC matched to a multi-switch monolithic GaN-based power device. These devices are mounted in a flip chip package platform to deliver higher efficiency and more than double the switching frequency of state-of-the-art silicon-based integrated power stage devices.
“The introduction of this family of GaN-based power devices for DC-DC applications heralds a new era in high frequency, high density, highly efficient power conversion solutions, and reaffirms IR’s position at the forefront of innovative power management design,” said Goran Stojcic, executive director for IR’s POL Products, Enterprise Power Business Unit. John Lambert, POL product manager, added: “With a switching capability up to 5MHz, the iP201x family enables designers to dramatically reduce the value and size of output capacitors and inductors where space is at premium. The devices can also be configured to operate at a lower switching frequency for applications that require the highest possible efficiencies.”
The iP2010 features an input voltage range of 7V to 13.2V and output voltage range of 0.6V to 5.5V with an output current up to 30A. The device operates up to 3MHz. Operating up to 5MHz, the pin-compatible iP2011 features the same input and output voltage range, but is optimized for an output current up to 20A. By offering multiple current rating devices in a common footprint, IR provides flexibility for meeting different customer requirements in terms of current level, performance and cost.
Available in an LGA package with small footprint, both devices are optimized for very low power loss, feature highly efficient dual-sided cooling, and are RoHS compliant.
|Sw Freq Range
||7.7 x 6.5mm LGA
||7 – 13.2
||0.6 - 5.5
||250 – 3,000
Availability and Pricing
Complete datasheets, demo boards and samples are available to qualified customers. Contact the Technical Assistance Center at email@example.com. Pricing begins at US $9.00 each and US $6.00 each respectively in 2,500-unit quantities for the iP2010TRPbF and iP2011TRPbF. Prices are subject to change.
GaNpowIR is a revolutionary Gallium Nitride (GaN)-based power device technology platform that can provide customers with improvements in key application-specific figures of merit (FOM) of up to a factor of ten compared to state-of-the-art silicon-based technology platforms to dramatically increase performance and cut energy consumption in end applications in a variety of market segments such as computing and communications, automotive and appliances. The pioneering GaN-based power device technology platform is the result of five years of research and development by IR based on the company’s proprietary GaN-on-silicon epitaxial technology. The high throughput, 150mm GaN-on-Si epitaxy, together with subsequent device fabrication processes which are fully compatible with IR’s cost effective silicon manufacturing facilities, offers customers a world-class, commercially viable manufacturing platform for GaN-based power devices. More information is available at our GaNpowIR™ Home Page.