IR's IR1168 SmartRectifier™ IC Wins EDN China Innovation Award 2009 for Best Power Device
EL SEGUNDO, Calif.— International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today announced the IR1168 SmartRectifier™ IC for AC-DC power converters for high-end LCD TVs was voted leading product in the Power Devices and Modules category of the EDN China Innovation Awards, 2009.
Now in its fifth year, the EDN China Innovation Awards is a premier event for China’s engineering community. This year, over 200,000 electronic design engineers and manufacturers were invited to vote for their top picks among almost 200 products from 95 of the world's leading manufacturers.
The IR1168 SmartRectifier™ 200V dual smart secondary-side rectifier driver IC is designed to drive two N-Channel power MOSFETs used as synchronous rectifiers (SR) in resonant half-bridge topologies. Co-designed with IR’s DirectFET® MOSFETs, which feature IR’s latest Trench silicon and packaging technology, the IR1168-based solution delivers an efficiency improvement of 1.5 percent for a standard 240W LCD TV Switch Mode Power Supply (SMPS) and a reduction of rectifier device temperature of 25°C while shrinking board size by two thirds.
“As a leader in power management, IR continually strives to introduce innovative solutions that help meet our customers’ design challenges. We are very pleased that in selecting our novel IR1168 SmartRectifier IC as the leading power device, IR has received such strong support from the China engineering community,” said Paul Rolls, IR’s senior vice president, Worldwide Sales.
The IR1168, featuring IR’s proprietary high-voltage IC technology, supports burst mode operation to deliver efficiency benefits even at light loads. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression that allows reliable operation in fixed and variable frequency applications. Other key features include maximum 500kHz switching frequency, anti-bounce logic and UVLO protection, 4A peak turn-off gate drive current, micropower start-up and ultra low quiescent current, 10.7V gate drive clamp, 70ns turn-off propagation delay and a wide Vcc operating range from 8.6V to 18V.
About EDN China
Since EDN China was launched as the first magazine to focus on electronics design for China 13 years ago, the country's electronics industry has become more and more integrated with the global market. It is the core mission of EDN China to help design engineers and managers in China to design and develop competitive products for both local and global markets. More information is available at http://www.ednchina.com/.