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IR’s Industrial Qualified MOSFETs Improve RDS(on) by 50 Percent; Reduce Overall System Cost
EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today announced a new range of trench HEXFET® Power MOSFETs featuring benchmark low on-state resistance (RDS(on)) in a TO-247 package for synchronous rectification, active ORing and industrial applications including high power DC motors, DC to AC inverters and power tools.
The new MOSFETs feature an improvement of up to 50 percent in RDS(on) over competing devices, eliminating the need for large and expensive packages typically used in industrial applications, and cutting overall system cost. Moreover, the low RDS(on) results in lower conduction losses and improved system efficiency.
“The superior RDS(on) ratings from this family allow designers to reduce system cost by as much as 50 percent by avoiding large and expensive ISOTOP or mini BLOC packages typically required to dissipate heat in high current industrial applications,” said Brian LaValle, marketing manager for IR’s Power Management Devices Business Unit.
The new family of N channel MOSFETs provide a voltage range from 40 V to 200 V. The devices are qualified to industrial grade and moisture sensitivity level 1 (MSL1). The new MOSFETs are offered lead free and are RoHS compliant.
Specifications
Availability and Pricing
The new MOSFETs are available immediately. Pricing begins at US $2.08 each for the IRFP4004PBF in 10,000-unit quantities. Pricing is subject to change.
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