IRís 600V Trench IGBTs Reduce Power Dissipation Up to 30 Percent in UPS and Solar Inverter Applications
EL SEGUNDO, Calif. ó International Rectifier, IRģ (NYSE: IRF), a world leader in power management technology, today introduced a family of 600V insulated gate bipolar transistors (IGBTs) that reduces power dissipation by up to 30 percent in uninterruptible power supply (UPS) and solar inverter applications up to 3 kW.
The new application-specific devices use IRís latest-generation field stop trench technology to reduce conduction and switching losses, and are optimized for switching at 20 kHz with low short circuit requirements, enabling higher efficiency power conversion in UPS and solar inverter applications.
ďTraditionally, IGBT devices have excessive switching losses at the frequencies used in UPS and solar inverters. IRís new Trench IGBT devices have lower switching energy coupled with low conduction losses. These lower losses provide higher efficiency, reducing the size of the unit and the cost of power generation to the end user,Ē said Carl Blake, IRís product marketing director, Energy Saving Products
Co-packaged with ultrafast soft recovery diodes, the new family of IGBTs has lower collector-to-emitter saturation voltage (VCE(on)) and total switching energy (ETS) than punch-through (PT) and non-punch-through (NPT) type IGBTs. In addition, the internal ultrafast soft recovery diode improves efficiency and reduces EMI.
Availability and Pricing
Pricing for the devices begins at US$0.68 for the IRGB4059DPbF, US$0.82 for the IRGB4045DPbF, US$0.84 for the IRGB4060DPbF, US$1.00 for the IRGB4064DPbF and US$2.79 for the IRGP4063DPbF each in 10,000-unit quantities. Production orders are available immediately. The devices are RoHS compliant and prices are subject to change.