International Rectifier Introduces High-Efficiency 150V DirectFET MOSFET for Cooler, More Compact DC-DC Converter Applications

EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced the IRF6643PbF, a 150V DirectFET® MOSFET for isolated DC-DC converters operating from a wide range, 36V to 75V universal telecommunications input and 48V fixed input systems. Combining IR’s advanced DirectFET packaging technology and its next-generation HEXFET® power MOSFET silicon, the new DirectFET device achieves a current rating up to 35 amperes while providing superior thermal performance and higher efficiency in a footprint equal to that of a low-profile SO-8 package.

“IR’s latest device in our DirectFET line-up minimizes conduction, switching and reverse-recovery losses by continuing to improve the critical parameters that determine the performance of power MOSFETs, RDS(on), Qg and Qgd. These improvements enable operation at higher current levels, while maintaining the smaller form factor of a single MOSFET,” said Carl Blake, director of technical marketing for IR’s Discrete Products. “Reducing board space by more than 50%, a single DirectFET MOSFET now can take the place of two or three SO-8 packages,” continued Blake.

The device’s extremely low typical 10V RDS(on) of 29 mOhms and low inductance makes it well suited for high-current synchronous rectifier sockets. Also, with its very low 39 nC Qg and 11nC Qgd, the IRF6643TRPbF functions well as a primary-side MOSFET in isolated or intermediate DC bus converters. The IRF6643TRPbF is packaged in the medium-sized (MZ) DirectFET package.

Part Number Package BVDSS (V) RDS(on) max @10V (mOhms) RDS(on) typ @10V (mOhms) VGS (V) ID @ Tc=25şC (A) QG typ (nC) QGD typ (nC)
IRF6643TRPBF DirectFET Med. Can 150 34.5 29 20 35 39 11

Patented DirectFET Packaging Technology

International Rectifier's patented DirectFET MOSFET packages present a new set of design advantages not previously delivered by standard plastic discrete packages. Their metal can construction enables dual-side cooling that effectively doubles the current handling capacity of high frequency DC-DC buck converters powering advanced microprocessors. In addition, devices in the DirectFET package are compliant with the Restriction of Hazardous Substances Directive (RoHS). For more information related to DirectFET MOSFET packaging technology, visit directfet.irf.com.

Availability and Pricing

The IRF6643TRPbF DirectFET MOSFET is available immediately. Pricing is US $1.24 each in 10,000-unit quantities. Prices are subject to change.