EL SEGUNDO, Calif.— International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced the IRF6641TRPbF Power MOSFET featuring IR’s benchmark DirectFET package technology paired with IR’s latest 200V HEXFET® MOSFET silicon technology to achieve 95 percent efficiency.

IR’s new 200V DirectFET device is designed for use in isolated DC-DC converter designs operating from a universal input range (36V to 75V). With its extremely low typical 10V RDS(on) of 51 milliohms and reduced gate charge, the IRF6641TRPbF is ideally suited as a synchronous rectifier MOSFET in high frequency, high efficiency DC-DC converters powering high current loads, the latest generation of intermediate bus converters, DC motor drives, and even 48-volt inverters used to convert power from wind turbines. It is also suitable for synchronous rectification in high current AC-DC converters used to power computers and telecom servers operating from a 48-volt universal input voltage range.

“Our new 200V DirectFET MOSFET achieves a current rating up to 25 amperes in a footprint the size of an SO-8 with only a 0.7 mm profile, while minimizing gate charge and package inductance to reduce both conduction and switching losses,” said Carl Blake, director of Technical Marketing for IR’s Discrete Products. “The board space savings alone of one DirectFET MOSFET versus two or three SO-8 devices is more than 50 percent,” adds Blake.

IR’s new device offers superior performance in many applications. In comparing the in-circuit efficiency of IRF6641TRPbF to other enhanced SO-8 devices in secondary-side synchronous rectification sockets, the new DirectFET device delivers a 0.4 percent efficiency improvement when the same numbers of enhanced SO-8 devices are used per socket. Additionally, IR’s new device provides the same seven-amp, full-load efficiency when the numbers of enhanced SO-8 devices are doubled-up at each socket. In this same analysis, the MOSFET temperatures are lowest in the circuit using two IRF6641TRPBF devices per socket.

The device has a common MZ footprint allowing an easy migration path to other mid-voltage DirectFET MOSFETs such as the lower voltage, 100-volt IRF6662 device in applications where the current levels increase and lower voltage is acceptable.

Part Number	Package	BVDSS (V)	RDS(on) max @10V (mOhms)	RDS(on) typ @10V (mOhms)	VGS (V)	ID @ Tc=25ºC (A)	QG typ (nC)	QGD typ (nC)
IRF6641TRPbF	DirectFET	200	59.9	51	20	26	34	9.5

Patented DirectFET Packaging Technology

International Rectifier's patented DirectFET MOSFET packages present a whole new set of design advantages not previously delivered by standard plastic discrete packages. Their metal can construction enables dual-side cooling that effectively doubles the current handling capacity of high frequency DC-DC buck converters powering advanced microprocessors. In addition, devices in the DirectFET package are compliant with the Restriction of Hazardous Substances Directive (RoHS).

Availability and Pricing

The new IRF6641TRPbF DirectFET MOSFET, shipped in tape and reel, is available immediately. Pricing is US $1.24 each in 10,000-unit quantities. Prices are subject to change.