IR Introduces Mid-Voltage MOSFETs Optimized for Switching Converter Applications in Netcom Systems
EL SEGUNDO, Calif. - International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced new N-channel 60, 80 and 100V HEXFET® MOSFETs for switching converter applications used in today’s networking and communications systems that improve the figure of merit for resistance multiplied by charge by as much as 36%. IRF7853PbF, IRF7854PbF, and IRF7855PbF are designed for AC-DC secondary-side synchronous rectification, isolated medium-power DC-DC applications.
“A MOSFET’s on-state resistance and total gate charge performance have a first-order effect on overall circuit efficiency. Our three new SO-8 devices use IR’s Trench MOSFET technology to deliver substantial reductions in RDS(on) and Qg to bring significant system-level benefits to converter circuits,” said Mario Battello, marketing manager for SMPS Products at International Rectifier.
Together with IR’s low-voltage MOSFETs and controller ICs, these mid-range MOSFETs form secondary-side chipsets for medium-power, converter applications. In addition, when combined with the SmartRectifierTM IR1167 in AC-DC power supplies such as laptop adaptors, for example, these new SO-8 devices can replace two of their large TO-220 MOSFET counterparts and their associated heatsinks, improving overall system efficiency by as much as 1%.
The 100V IRF7853 is also optimized for wide-range communication bus input (36V to 75V) primary-side bridge topologies in isolated DC-DC bus converters. The 80V IRF7854 is useful for active ORing and hot-swap applications. All three of the MOSFETs are designed for secondary-side synchronous rectification in 5-19Vout flyback converter and resonant half-bridge applications and are suitable for isolated DC-DC applications as primary-side switches in forward or push-pull topologies for 18-36Vin isolated DC-DC converters.
Part Number |
Package |
VDSS |
RDS(on) max @ VGS=10V |
Qg typical |
Qgd typical |
IRF7853PbF |
Lead Free SO-8 |
100V |
18mOhm |
28nC |
10nC |
IRF7854PbF |
Lead Free SO-8 |
80V |
13.4mOhm |
27nC |
8.7nC |
IRF7855PbF |
Lead Free SO-8 |
60V |
9.4mOhm |
26nC |
9.6nC |
Availability and Pricing
These HEXFET® MOSFETs are available immediately. Pricing in 10,000-unit quantities begins at US $1.20 each for IRF7853, US $1.06 each for IRF7854, and US $1.04 each for IRF7855.
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