IR’s Logic-Level Automotive Trench HEXFET® MOSFET Simplifies Drive Requirements

EL SEGUNDO, Calif. — February 2006 -- International Rectifier, IR®(NYSE: IRF), a world leader in power management technology, today introduced the 100V-rated IRLR3110ZPbF, a new addition to IR’s logic-level trench HEXFET® MOSFET family. The device has an improved logic gate capability, resulting in only a 14% increase in on-resistance when going from a 10V gate drive to a 4.5V gate drive. The new device is Q101-qualified for automotive use up to the maximum junction temperature of 175° Celsius, and features 16mOhm on-resistance at 4.5V.

“Automotive electrical systems such as window lifts, lighting, actuators and anti-lock braking (ABS) can be simplified by using the new IRLR3110ZPbF, since the 4.5V drive enables direct interfacing to microprocessor outputs with a 5V bus,” said Anthony Murray, International Rectifier automotive product manager.

Part Number Package VDS RDS(on)
VGS = 10V
VGS = 4.5V
ID Max. Rth (°C/W) Typical RDS(on)
Temp. Coeff.
Gate Drive Qual Level
IRLR3110ZPbF D-Pak 100V 14mOhm 16mOhm 42A(1) 1.05 2.67 Logic Q101
(1)Package Limited

Availability and Pricing

The Q101-qualified IRLR3110ZPbF is available immediately, and is priced at US $1.10 each in 10,000-unit quantity. Die are also available in various chip packaging media. Prices are subject to change. The device is RoHS (Restriction of Hazardous Substances) compliant.