INTERNATIONAL RECTIFIER - THE POWER MANAGEMENT LEADER

IR HEXFET® MOSFET Chip Set Delivers Up to 2 Percent Higher Efficiency in Two-Phase DC-DC Buck Converters

EL SEGUNDO, Calif. — January 2006 — International Rectifier, IR®(NYSE: IRF), a world leader in power management technology, today introduced a pair of 30V HEXFET® power MOSFETs that deliver up to 2% higher light-load efficiency over solutions using 30V MOSFETs in 45A, two phase synchronous buck converters powering the latest Intel and AMD processors for notebook and other high performance computing applications.

These new lead-free devices, the IRF7823PbF and IRF7832ZPbF, maximize efficiency and power density by optimizing conduction, switching and body diode losses. The two devices are designed to be used as a chip set in two-phase synchronous buck converter circuits requiring one control and two synchronous MOSFETs per phase. The new SO-8 MOSFETs are also suitable for other PWM-controlled DC-DC buck converter applications.

“High efficiency, under low and intermediate power levels, is important in notebook applications since this is where most of the battery power is consumed. In this setting, our new chip set can deliver up to 2% higher efficiency in the 5 amp to 15 amp range,” said Jeff Sherman, International Rectifier, senior marketing manager, Portable Computing Solutions. “The lower power losses achieved by these new devices also contribute to systems that run cooler, another very important aspect for portable computing,” he added.

The chip set consists of a control MOSFET and a synchronous MOSFET, with each device tailored to maximize performance in their role. Control MOSFETs have reduced switching losses (gate charge), while synchronous MOSFETs have low conduction losses (low on-resistance), and low reverse-recovery charge.

The IRF7823PbF is an optimized control FET, with very low gate charge (Qg) and gate-to-drain charge (Qgd) of only 9.1nC and 3.2nC, respectively.

The IRF7832ZPbF has been optimized for the synchronous FET function, with extremely low typical 4.5V on-resistance, or RDS(on), of 3.7mOhm, and is suitable up to 12A.

Part Number BVDSS
(V)
VGS
(V)
RDS(on)
Typ./Max.
VGS=4.5V
(mOhm)
RDS(on)
Typ./Max.
VGS=10V
(mOhm)
Vth
(V)
QG VGS=5V
(nC)
QGS1
(nC)
QGD Vds=16V
(nC)
QGS2
(nC)
IRF7823PbF 30 ±20 9.3/ 11.9 6.9/ 8.7 1.9 9.1 2.7 3.2 0.8
IRF7832ZPbF 30 ±20 3.7/ 4.5 3.1/ 3.8 1.3 -2.3 30 7.9 11 2.6

Availability and Pricing

The IRF7823PbF and the IRF7832ZPbF are available immediately. Pricing is US $0.50 each for the IRF7823PbF, while the IRF7832ZPbF is US $0.88 each in 10,000-unit quantities. Prices are subject to change. The devices are lead-free and are compliant with the Restriction of Hazardous Substances Directive (RoHS).

 
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