EL SEGUNDO, Calif., -- December 2004 -- International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced the IRF6665 DirectFET® MOSFET for medium power Class D audio amplifiers. The device parameters are tuned specifically for improved audio performance such as efficiency, total harmonic distortion (THD) and power density. Applications for Class D amplifiers range from battery-powered portable products to high-end professional amplifiers, musical instruments and car and home multimedia systems.

In addition to application-tuned silicon, IR's DirectFET packaging technology enhances performance in Class D audio amplifier circuits by reducing lead inductance, which improves switching performance and reduces EMI noise. Thermal efficiency enables 100W operation into 8ohms without a heatsink. Eliminating heatsinks shrinks circuit size and bulk, giving designers more layout flexibility and reduces amplifier cost.

Critical MOSFET parameters determining Class D audio performance include device on-resistance, or RDS(on) and gate charge, or Qg. These can parameters determine efficiency in a Class D audio amplifier.

"International Rectifier's expertise in synchronous rectification and power MOSFET switching circuits applies to Class D audio topologies. Combining IR's unique DirectFET packaging with our ability to tune device parameters for specific applications pushes the envelope of Class D audio performance for higher efficiency, improved EMI and higher power density," said David Tam, Vice President, Consumer and Industrial Sector Business.

Part Number	Package	BVDSS(V)	RDS(on) typ @10V(mOhm)	ID @ Tc=25ºC(A)	QG typ.(nC)	QSW typ.(nC)
IRF6665	DirectFET®	100	51	19	8	3.5

For more information related to DirectFET MOSFET Packaging Technology visit the DirectFET Home page or the DirectFET Discovery Center

Availability and Pricing

The new IRF6665 Class D audio DirectFET® MOSFET is available immediately. Pricing is US $0.52 each in 10,000-unit quantities.