EL SEGUNDO, Calif. - September 2004 -- International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced new radiation-hardened (RAD-Hard™) logic-level gate drive MOSFETs designed to boost efficiency and performance in circuits that traditionally relied on bipolar transistors. The general purpose, low power switching devices are made for harsh environments.

Compared to 2N2222A and 2N2907A bipolar transistors, IR's RAD-Hard MOSFETs require less energy, switch faster and feature a lower on-state resistance. Packaged in a UB (3LCC) surface-mount or through-hole package, they are a compact, lightweight, hermetic alternative to bipolar devices.

"IR's RAD-Hard logic level MOSFETs offer superior switching performance over their bipolar equivalents and are easier to drive. The new MOSFETs improve gain and are ideal replacements for bipolar transistors in circuits requiring high tolerance to radiation," said Bryan Rogers, Vice President of Sales and Marketing, HiRel Products.

The new devices, IRHLUB7970Z4 and IRHLUB770Z4, can be driven directly from industry-standard logic gates, linear ICs, or micro-controllers that operate from a low voltage source of 3.3 to 5V. They are available in screened and commercial off-the-shelf (COTS) versions.

Part Number	Gate Drive	BVDSS	Polarity	VGS(th)	RDS(on)	Rad Level
IRHLUB7970Z4	Logic Level, 5V, CMOS & TTL	-60V	P-Channel	-1.0 to -2.0V	1.2Ohm	100k rad, (Si) TID
IRHLUB770Z4	Logic Level, 5V, CMOS & TTL	60V	N-Channel	1.0 to 2.0V	0.55Ohm	100k rad, (Si) TID
Notes:SEE hardened to LET 82 MeV/(mg/cm2) (Gold)

Availability and Pricing

The new logic-level MOSFETs are available now. Pricing for the IRHLUB7970Z4 and IRHLUB770Z4 begins at US $80.00 each, both in 500-unit quantities.