EL SEGUNDO, Calif. May 2004 - International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced the IRF7842, a 40V N-channel HEXFET® power MOSFET optimized for isolated DC-to-DC converters for telecommunications systems.

The 40V rating enhances reliability when used in secondary-side synchronous rectification circuits for telecom and datacom systems where a wide range input voltage of 36V to 75V is typically used. This can develop a voltage swing on the secondary side in the range of 5V to 12V, therefore requiring a 40V MOSFET since a 30V rated device does not provide the required voltage rating headroom. The new 40V device expands the IR offering of secondary-side power management switch devices for telecommunication systems.

The IRF7842 achieves 95.2% efficiency at 150W full load when used for secondary-side synchronous rectification in an isolated DC-DC bus converter featuring IR's IR2085S primary-side PWM IC. The IRF7842 also delivers as much as 0.5% higher efficiency when compared to industry-standard 40V devices in the same DC-DC bus converter.

Carl Smith, Marketing Manager for Networking and Telecommunication Products, said, "IR's trench MOSFET technology used in the IRF7842 optimizes on-resistance as well as total gate charge for the lowest possible losses. In addition, the standard SO-8 package enables a simplified upgrade path to existing designs."

Part Number	BVDSS	VGS	RDS(on) max. @10V	RDS(on) max. @4.5V	Qg typ. @50% VDS	QGD typ.	Package
IRF7842	40V	+/-20V	5mOhm	5.9mOhm	33nC	10nC	SO-8