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International Rectifier Introduces Family of Automotive Trench MOSFETs for Smaller, More Efficient Power Management Systems
IRF2804S Delivers 2.0mOhms On-Resistance (max)
EL SEGUNDO, Calif. September 2003 - International Rectifier, IR® (NYSE: IRF), today introduces the newest range of trench HEXFET® power MOSFETs, including the IRF2804S with 2.0mOhms in the D2Pak. IR's fabrication process enables minimum device on-resistance with lower temperature coefficient and the avalanche capability required by the harsh automotive environment. In many applications this enables a shift from larger-packaged devices such as D2Pak to smaller D-Pak devices, reducing power dissipation, system size and cost, while simplifying power management integration into other systems.
The new automotive MOSFETs feature improved efficiency, switching performance, ruggedness and lower gate charge for high power automotive applications. Their avalanche capability can allow a lower-voltage device to be used, for instance 40V instead of 55V, taking advantage of the lower on-resistance associated with the lower voltage provided the maximum junction temperature is not exceeded.
Ivo Jurek, Vice President, Automotive Products, said, "Efficient thermal management is essential in high power automotive applications. IR's new automotive trench MOSFETs provide extremely low power dissipation per unit area. They set a new standard of performance in next-generation automotive applications including integrated starter alternator (ISA), synchronous rectifier alternators, electrical power steering (EPS), brush and brushless DC motor control and anti-lock brake systems (ABS)."
All devices are Q101-qualified and rated for both single-pulse and repetitive avalanche up to the maximum junction temperature of 175°Celsius.
| Part Number |
Package(2) |
VDS |
RDS(on)max |
ID max |
Rthj-c°C/W |
RDS(on)Temp Coeff. |
Gate |
Qual Level |
| IRF2804S |
D2-Pak |
40V |
2.0mOhms |
75A(1) |
0.45 |
1.80 |
Std |
Q101 |
| IRF1404ZS |
D2-Pak |
40V |
3.7mOhms |
75A(1) |
0.65 |
1.80 |
Std |
Q101 |
| IRF4104S |
D2-Pak |
40V |
5.5mOhms |
75A(1) |
1.05 |
1.80 |
Std |
Q101 |
| IRFR4104 |
D-Pak |
40V |
5.5mOhms |
42A(1) |
1.05 |
1.80 |
Std |
Q101 |
| IRF1405ZS |
D2-Pak |
55V |
4.9mOhms |
75A(1) |
0.65 |
2.10 |
Std |
Q101 |
| IRF3205ZS |
D2-Pak |
55V |
6.5mOhms |
75A(1) |
0.67 |
2.10 |
Std |
Q101 |
| IRF1010ZS |
D2-Pak |
55V |
7.5mOhms |
75A(1) |
1.11 |
2.10 |
Std |
Q101 |
| IRFZ48ZS |
D2-Pak |
55V |
11.0mOhms |
61A |
1.64 |
2.10 |
Std |
Q101 |
| IRFZ46ZS |
D2-Pak |
55V |
13.6mOhms |
51A |
1.84 |
2.10 |
Std |
Q101 |
| IRFR4105Z |
D-Pak |
55V |
24.5mOhms |
30A(1) |
3.12 |
2.10 |
Std |
Q101 |
| IRF1010EZS |
D2-Pak |
60V |
8.5mOhms |
75A(1) |
1.11 |
2.20 |
Std |
Q101 |
| IRFZ44VZS |
D2-Pak |
60V |
12.0mOhms |
57A |
1.64 |
2.20 |
Std |
Q101 |
| IRF2807ZS |
D2-Pak |
75V |
9.4mOhms |
75A(1) |
0.90 |
2.25 |
Std |
Q101 |
| IRFR3710Z |
D-Pak |
100V |
18.0mOhms |
42A(1) |
1.05 |
2.50 |
Std |
Q101 |
Notes:
(1) Package limited value.
(2) All D2Pak and D-Pak devices also available in TO-220 and die form in various chip packaging media.
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Pricing for the new trench HEXFET® automotive power MOSFETs begins at US $2.35 each for the benchmark-performing IRF2804S in 10,000-unit quantities. Go to http://die.irf.com for information on die product availability.
For more information:
Contact the Technical Assistance Center or
your local Sales Rep.
High Resolution JPEGs are available in the Press Room.
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