EL SEGUNDO, Calif. August 2003 - International Rectifier, IR® (NYSE: IRF), today introduces the new 100V-rated IRF7495 and the 80V-rated IRF7493 N-channel HEXFET® power MOSFETs optimized for isolated full- or half-bridge topology DC-to-DC converters used in telecommunications systems.

The IRF7495 and IRF7493 have very low device on-resistance and very low gate-to-drain charge, making them ideal for converter switching frequencies up to 500kHz.

IR's latest trench design dramatically enhances MOSFET on-resistance and gate charge performance, resulting in increased efficiency that translates into over 10°C cooler junction temperatures when compared to other competing devices. This performance is specifically achieved when the devices are used on the primary side of a 48V Bus Converter solution. Cooler junction temperatures mean better reliability, extremely important in today's networking and communications infrastructure.

The IRF7495 is designed for half and full bridge topologies in universal telecom input voltage range (36V to 75V) systems, and features as much as 17% lower combined on-state resistance, RDS(on) , and gate charge, QG figure of merit compared to competing devices.

The IRF7493 is optimized for half and full bridge topologies in reduced ETSI (European Telecom Spec) range (36V to 60V) or regulated 48V systems. The IRF7493 demonstrates as much as 7% lower combined on-state resistance and gate charge figure of merit when compared to similar competing devices. The IRF7493 is a part of IR's new DC bus converter chip set for isolated two-stage distributed power architectures (DPA) for 48V-input systems, where second stage point-of-load (POL) converters generate a tightly regulated load voltage from a non-regulated input voltage. Two-stage DPA schemes do not require a tightly regulated intermediate bus voltage, since the POL will typically accept a relatively wide input voltage, and the POL provides the needed regulation to the load.

In addition, these devices can be used to reduce overall power loss in 150W active ORing applications versus standard diode solutions by as much as 90%, since the effective on-state resistance creates much less DC loss versus the forward voltage of an ORing diode. At the same time, the package size is reduced to an SO-8 from a bulky D2Pak that is typically used with a diode ORing solution to handle the power dissipation. The new devices are also suitable for 48V hot-swap applications, and can also be used as synchronous rectifiers for regulated 12V to 24V output voltages, where low on-state resistance is key to improving performance, and these devices provide between 5-10% better on-state resistance versus similar competing devices.

"The new SO-8 packaged MOSFETs have low gate charge for low switching losses, and minimized overall on-state resistance for reduced conduction losses. Selecting the new 80V and 100V IR devices will improve DPA architecture used in high-performance netcom systems, including isolated converters, active ORing and hot swap circuits," said Carl Smith, Marketing Manager for Networking and Telecommunication Products at International Rectifier.

Part Number	Package	VDSS	RDS(on) max. @VGS=10V	QGtyp.	QGDtyp.
IRF7493	SO-8	80V	15mOhms	35nC	12nC
IRF7495	SO-8	100V	22mOhms	34nC	11.7nC

Availability and Pricing

The IRF7493 and IRF7495 are available immediately. Pricing for both devices is US $0.57 each in 10,000-unit quantities.

High Resolution JPEGs are available in the Press Room.