EL SEGUNDO, Calif. July 2003 - International Rectifier, IR® (NYSE: IRF) today introduces the 200V-rated IRF7492 and the 150V-rated IRF7494 HEXFET® N-channel power MOSFETs that feature up to 56% reduction in device on-resistance. Gate-to-drain (Miller) charge for the IRF7492 and IRF7494 compared to the charge of the matching on-state resistance of similar devices on the market is reduced by as much as 50%.

In a typical 150 watt forward converter application, replacing an industry standard SO-8 device with IR's new generation SO-8 IRF7492 or IRF7494 will result in about 0.5% increase in efficiency. This in turn will lower the device junction temperature by as much as 15 to 20 degrees Celsius.

The new MOSFETs are designed for primary-side switching applications in forward or push-pull power converter topologies for board-mounted power (BMP) modules in telecom and networking systems.

"Key MOSFET parameters include device on-resistance and gate charge. These parameters have a 'first order effect' on overall circuit performance. The new IRF7492 and IRF7494 are made with IR's latest trench technology, which reduces conduction and switching losses for increased overall efficiency," said Carl Smith, Marketing Manager for Networking and Telecommunication Products at International Rectifier.

The IRF7492 and IRF7494 have low RDS(on) and gate charge, and are ideal for DC-to-DC converter switching applications as high as 500kHz. The new MOSFETs have been designed for a maximum gate voltage of 20V. In addition, the new MOSFETs have low gate impedance, minimizing switching loss even further.

Part Number	Package	VDSS(V)	RDS(on) max @ VGS=10V(mOhms)	Qg typical(nC)	Qgdtypical(nC)
IRF7494	SO-8	150V	44mOhms	36nC	13nC
IRF7492	SO-8	200V	75mOhms	38nC	16nC

Pricing and Availability

The new IRF7492 and IRF7494 HEXFET MOSFETs are available immediately. Pricing is US $0.67 each in 10,000-unit quantities.

High Resolution JPEGs are available in the Press Room.