EL SEGUNDO, Calif. March 2003 - International Rectifier, IR® (NYSE: IRF), today introduces the IRF8010 series HEXFET® power MOSFETs with as much as 10% lower on-resistance, or RDS(on) than previous devices. The new devices have high current density and low on-resistance (12 millimOhms typical) for maximum system efficiency.

The new MOSFETs are rated for repetitive and single pulse avalanche energy, EAR and EAS, up to 175°C. In addition, the new MOSFETs feature minimized input capacitance and gate charge to simplify gate driver circuits and cost while improving switching performance at the same time. The performance characteristics make the new IRF8010 MOSFETs ideal primary switches in isolated topology, high-efficiency UPS and DC-DC converters.

"Motor control manufacturers can improve efficiency, ruggedness and reliability at lower cost with the new IRF8010 for DC chopper, AC motor inverter and DC motor applications," said Alberto Guerra, International Rectifier Director Technical Marketing & Applications.

The new devices are industrial qualified and fully characterized in thermal resistance for end of life conditions in highly demanding power and thermal cycling, typically found in motor control applications, such as forklifts, DC choppers and battery-operated vehicles.

The thermal characterization enables designers to establish proper guard-bands and targets for final products that must operate in long-term stress and harsh power cycling conditions, for improved reliability.

Part Number	VDSS	RDS(ON)	ID	RthJ-C	TJ	Package
IRF8010	100V	12mOhms	80A	0.57°C/W	175°	TO-220
IRF8010L	100V	12mOhms	80A	0.57°C/W	175°	TO-262
IRF8010S	100V	12mOhms	80A	0.57°C/W	175°	D2Pak

Availability and Pricing

The new MOSFETs are available immediately. Pricing begins at US $0.624 each for the IRF8010 in 5,000-unit quantities.

High Resolution JPEGs are available in the Press Room.