International Rectifier
Gen 5 HEXFET®
Power MOSFET Manufacturing Process
Four-Mask Process
International Rectifier's Generation 5 HEXFET power MOSFET technology ushers in the industry's first 4-mask process. Using innovative self-alignment processes that dramatically improve manufacturing precision, the new technique allow DMOS junction depths 30-40% smaller than conventional methods, thereby greatly reducing JFET resistance while enhancing ruggedness.
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