EL SEGUNDO, CA. September 1999 - International Rectifier ( IR®), the power conversion experts, announces 10 additions to their extensive SOIC HEXFET® power MOSFET product range, once again setting the standard for low RDS(on). These new devices, targeted primarily at load and battery management applications, show improvements of up to 80 percent over the previous industry best.

"In load and battery management applications, MOSFETs are used to just switch DC current at a low frequency, so the on-resistance, or RDS(on), is by far the most critical parameter," said Elisa Clemente, marketing director for MOSFETs for portable applications at IR. "Since RDS(on) is proportional to energy loss in conduction, these massive reductions in RDS(on) provide considerable energy savings and result in longer battery life for the customer.

"Large reductions in RDS(on) also allow IR to reduce package size while delivering the same performance. For instance, the new Micro8^TM IRF7663 has 38 percent lower RDS(on) and has 50 percent of the footprint area when compared to the best SO-8 P-channel previously available from IR," Clemente added.

The silicon for these new SOIC devices is based on IR's trench HEXFET® technology platform, which delivers the highest cell density of any trench technology in production today. IR is also introducing a new package style to the product family -- the TSOP-6. This industry standard package has exactly the same footprint and outline as the existing Micro6^TM but offers a 24 percent lower profile.

Other packaging styles have also been improved. For instance, the Micro3 (also known as SOT-23) now can accommodate 50 percent more silicon without impacting reliability. This increase facilitated a 90 percent reduction in RDS(on) in the Micro3 footprint, compared to previous offerings from IR.

The following is a list of the new SOIC devices from IR compared with the previous industry standards. These new devices are just part of the total SOIC product range offered by IR. There are more than 50 other device options available.

Part Number	Package	Breakdown Voltage	RDS(on) @ 4.5V (mOhms)	RDS(on) Improvement	Primary Application
IRLML6402	Micro3TM	-20V	60	53%	Cell Phone
IRLML6401	Micro3	-12V	50	61%	Cell Phone
IRLML2502	Micro3	20V	45	41%	Battery Motor Drive
IRLMS6802	Micro6TM	-20V	50	23%	Notebook Cell Phone
Si3443DV	TSOP-6	-20V	65	Industry Std.	Notebook Cell Phone
IRLMS4502	Micro6	-12V	42	35%	Cell Phone
IRLMS2002	Micro6	20V	30	33%	Battery Motor Mrive Cell Phone
IRF7663	Micro8TM	-20V	20	77%	Notebook Cell Phone
IRF7555	Micro8 dual	-20V	55	80%	Notebook Cell Phone
IRF7530	Micro8 dual	20V	30	77%	Battery Pack
IRF7423	SO-8	-30V	16	50%	Notebook Cell Phone
Si4435DY	SO-8	-30V	35	Industry Std.	Notebook Cell Phone
IRF7324	SO-8 dual	-20V	20	39%	Cell Phone
IRF7210	SO-8	-12V	7	36%	Notebook Cell Phone
IRF7220	SO-8	-12V	12	Industry Std.	Notebook Cell Phone
IRF7233	SO-8	-12V	20	Industry Std.	Notebook Cell Phone

All of the new SOIC devices are currently available in production quantities.

For other related information visit the HEXFET Power MOSFET web-site.