EL SEGUNDO, CA. July 1999 - International Rectifier (IR^®) has announced new technologies for IGBTs (Insulated Gate Bipolar Transistors) and complementary FRDs (Fast Recovery Diodes), which offer the most efficient performance available today for industrial offline applications, such as motor drives and power conversion applications, which include welders and UPSs. The new technology offers more than 20 percent performance improvement of on-state and switching losses when compared to the best available product in the market today.

The first two devices to be released in the discrete family of products are the IRGP30B120KD-E and the IRGP20B120UD-E. These are Co-Pack devices combining the IGBT and Diode in an industry standard TO-247 package with ratings of 1200V, 30A and 20A respectively (IC at 90°C). The K version has been optimized for motor drive applications with a typical Vce of 2.7V at rated current, and the U version has been optimized for power conversion with a typical Vce of 3.9V at rated current. The switching losses of both the devices have been optimized to provide maximum efficiency in their respective applications. The first devices to be released in the family of die products are the 25, 50, 75, 100A die pairs, which include both an IGBT and similarly rated FRD.

A previous generation of IR IGBTs and FRDs using epitaxial wafers has up to now offered the leading efficiency in the industry. The new generation of IGBTs and FRDs continues IR's trend of industry leading efficiency, while offering dramatically improved SOA (Safe Operating Area) and performance under short-circuit conditions. This will allow motor drive designers to take advantage of the more efficient devices while using the same circuit design as they would with competitors' devices. Compared with previous generations of products this can help to reduce (or eliminate) snubber circuitry and/or heatsinking, giving potential system cost savings of 10-20 percent.

This new technology for both IGBT and FRD has the benefit of a positive temperature coefficient for the on-state losses (Vce & Vf), which allows for easier paralleling of devices and more balanced temperatures (hence higher reliability) with multiple chip modules. The switching loss for this new device is less dependent on temperature than previous generation devices. This combination will allow for less de-rating of the system for higher operating temperatures.

IGBT Part No.	Complementary FRD Die	Voltage	Package	Ic	Vce(on) typ.	Eoff typ.	Diode Vf typ.
IRGP30B120KD-E		1200V	TO-247 Co-Pack	30A	2.7V	1.5mJ	1.9V
IRGP20B120UD-E		1200V	TO-247 Co-Pack	20A	3.9V	0.75mJ	1.9V
IRGC25B120K	HF40D120A	1200V	Die	25A	2.7V	1.5mJ	1.9V
IRGC50B120K	HF50D120A	1200V	Die	50A	2.7V	5.6mJ	1.9V
IRGC75B120K	HF70D120A	1200V	Die	75A	2.7V	8.4mJ	1.9V
IRGC100B120K	HF72D120A	1200V	Die	100A	2.7V	11.1mJ	1.9V

Matthew Carter, technical marketing manager at IR for Motor Drive Switches, said, "International Rectifier has built a reputation for having the most efficient IGBTs in the industry for motor control applications, as well as for power conversion. This development in technology reinforces IR's commitment to offering the most efficient switch products, so that our customers can design the most efficient systems possible."

The new technology will be used as the basis for a family of die, discrete and module part types to be released over the coming months. Data sheets will be available in late July from the IR Web site (www.irf.com) and Fax-On-Demand system (310-252-7100 USA and +44 1883 783 420 Europe). Samples will be available in Q3 1999 with production in Q4 1999.

For other related information visit the Motor Drive and IGBT web-sites.