EL SEGUNDO, CA. April 1999 - International Rectifier (IR) now offers a selection of five new P-channel MOSFETs with ratings of - 12V to -20V, three of the which deliver industry-leading performance for power management applications. The new devices are available in single and dual configurations in three different surface mount package styles including the Micro6^TM, Micro8^TM and SO-8 outlines.

These three new benchmark P-channel devices demonstrate IR's commitment to remain at the forefront of device performance for power management applications for portable equipment," says Elisa Clemente, marketing director for MOSFETs for portable applications at IR. "These devices provide customers with best-in-0class performance and follow our recent announcement of the world's lowest on-resistance P-channel MOSFET in an SO-8 package -- the IRF7210 -- in October 1998.

"Since P-channel devices are typically used in load management applications, they tend to just conduct DC currents and not switch at high frequencies, so R_DS(on) is by far the most important selection factor," Clemente explained.

For example, the two new products offered in the Micro8^TM outline all set new benchmarks in R_DS(on) with reductions up to 72 percent over previously available devices. They provide an excellent performance versus space utilization trade-off when compared to TSSOP8 package outlines that have more than 30 percent larger footprints. They are also available in single and dual configurations so the designer is truly able to trade-off performance and board real estate.

Similarly, the new Micro6^TM device, IRLMS6802, has the equivalent footprint to TSOP6 package, and offers and R_DS(on) of just 50mOhms -- the lowest available for any P-channel product in this package outline. The SO-8 devices, IRF7220 and IRF7233, complete the 12V - 14V SO-8 P-channel product family, they are additions to the IRF7210, 12V, 7mOhms announced October 1998. Now, with specifications from 20mOhms down to 7mOhms, designers are able to choose a performance device that is exactly suited to their application whether cost or system efficiency are the driving factors.

Each of the devices offers specific characteristics to give the best cost/performance trade-off. So whether the application demands the highest efficiency or a lower cost solution, IR has a device exactly suited to the designers needs.

The product family is shown below:

Part Number	Package Style	BVdss	Configuration	RDS(on) at Vgs=2.5V	RDS(on) at Vgs=4.5V	Samples	Production
IRF7220	SO-8	-14V	Single	20mOhms	12mOhms	Now	Now
IRF7233	SO-8	-12V	Single	33mOhms	20mOhms	Now	Now
IRF7555	Micro8TM	-20V	Dual	105mOhms	55mOhms	Now	Q2 CY'99
IRF7663	Micro8TM	-20V	Single	40mOhms	25mOhms	Now	Q2 CY'99
IRLMS6802	Micro6TM	-20V	Single	100mOhms	50mOhms	Now	Now

Samples for all products are available upon request.

For other related information visit the HEXFET Power MOSFET web-site.