EL SEGUNDO, CA. December 1998 -- International Rectifier Corporation (IRF/NYSE) today announced that the United States Federal District Court in Los Angeles, California, indicated its intention to issue a preliminary injunction that prohibits Samsung Semiconductor, Inc. and Samsung Electronics Co., Ltd. from selling in the U.S. any Samsung planar power MOSFET or SenseFET product. Specifically, the court order will bar Samsung from importing into or making, using, selling or offering its power MOSFETs for sale in the U.S. and will also bar any person in active concert or participation with them from such activities. The injunction will be effective upon the Court's entry of its written decision and IR's posting of an injunction bond.

The injunction is in response to IR's patent infringement and contributory infringement claim against Samsung Semiconductor, Inc. and Samsung Electronics Co., Ltd.. International Rectifier sued the Samsung companies in January 1998, charging infringement of IR's U.S. Patents 4,959,699 and 4,705,759, and IR's U.S. Patent No. 4,642,666 was later added to IR's complaint. IR is proceeding with that litigation and seeking damages and a permanent injunction that prohibits the sale of infringing Samsung MOSFETs, including IGBTs.

Earlier this month, International Rectifier sued the Samsung companies in a separate action charging infringement of IR's U.S. Patents 5,008,725 and 5,130,767. On June 9, 1998, the U.S. Federal District Court in Los Angeles issued a preliminary injunction prohibiting Samsung Semiconductor, Inc. and Samsung Electronics Co., Ltd. from importing into or making, using, selling or offering for sale in the U.S IGBT's (insulated gate bipolar transistors) designated by Samsung part number SGL60N90D. The Samsung companies have appealed the District Court's June 9 preliminary injunction order and have indicated they will appeal the more recent preliminary injunction, as well.

International Rectifier is a major worldwide supplier of components and subsystems that convert electrical power to operate power supplies, motor drives, and lighting ballasts. Its patented HEXFET® power MOSFETs and IGBTs make IR the world leader in field effect transistors. IR's technological advances improve the performance and energy efficiency of electronic and electrical equipment in automotive, consumer, computer/peripheral, industrial, lighting, telecom, and government/space applications.