EL SEGUNDO, CA. October 1998 - International Rectifier is announcing the release of a new small-outline power MOSFET that breaks all previous records for a P-channel device in the SO-8 outline. The new device, designated IRF7210, has a BV_DSS rating of -12V, with an on-resistance (R_DS(on)) of 7 milliOhms (at V_GS=4.5V) -- about the same value that many leading-edge manufacturers are offering for their N-channel types. This announcement from IR thus modifies the historic assumption that P-channel types had over twice the R_DS(on) of their N-channel counterparts.

"This is a real breakthrough for several power-conscious, battery-powered applications," states Elisa Clemente, director of marketing for switches for portable electronics at IR. "The R_DS(on) of this new device is about half of what was achieved before in the SO-8 -- which translates directly to lower power dissipation and longer battery life in load management applications." While the device has been developed specifically for and is being designed into mobile phone applications, it is anticipated that many load-management applications in portable electronic systems will benefit from the IRF7210's new, lower R_DS(on) spec.

Samples of the IRF7210 can be obtained through International Rectifier's normal sales channels. .