International Rectifier Expands Warp SpeedTM IGBT Line with New 900-V Device
This 900-V IGBT is the first in its class to allow switching frequencies up to 100 kHz -- triple the norm -- making it an ideal replacement
for MOSFETs in several switching power supply applications.
EL SEGUNDO, CA. July 1998 - International Rectifier (IR) now offers a new WARP SpeedTM
IGBT rated at 900 Volts, designated the IRG4PF50W. This high-efficiency device is designed for use in flyback and single
forward power supply topologies that operate at bus voltages to 400 Volts, in applications like
switch-mode power supplies (SMPS), welders,
uninterruptible power supply (UPS) and power factor correction in the 5 kW region.
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"As with all IGBTs, this new 900-V WARP Speed device offers far superior current handling capabilities when compared to
MOSFETs," says Chesley Chao, technical marketing manager for HEXFET®s and IGBTs at International Rectifier.
"These WARP Speed IGBTs also provide a usable frequency range extending up to 100 kHz, allowing a single new 900-V IGBT
to replace several paralleled high power MOSFETs to cut costs and required board space.
"This device provides the same benefits as our initial 600-V WARP Speed IGBTs -- simpler gate drivers compared to the
equivalent MOSFETs, reduced EMI and the same functional pin-outs for ease of design," Mr. Chao adds.
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WARP Speed IGBTs allow designers to use smaller, less expensive IGBTs in place of large-die-size MOSFETs
for the same power rating, significantly reducing component cost without impacting performance in off-line power
conversion applications.
See the IGBT Home Page for additional information.
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IR is manufacturing the IRG4PF50W 900-V WARP Speed IGBT in its HEXFET America facility in Temecula, California -- the
world's largest power MOS production facility.
The IRG4PF50W, rated at 51A @ 25
oC, is available for production volume now with samples in stock.
For more information:
Contact the Technical Assistance Center or
your local Sales Rep.
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