Court Grants International Rectifier Injunction Against Samsung Transistor
EL SEGUNDO, CA. June 1998 - International Rectifier Corporation (IRF/NYSE) today announced that the United States Federal District
Court in Los Angeles, California on June 3, 1998 granted the Company's motion for a preliminary injunction prohibiting Samsung
Semiconductor, Inc. and Samsung Electronics Co., Ltd. from importing into or making, using, selling or offering for sale in the U.S.
IGBTs (insulated gate bipolar transistors) designated by Samsung part number SGL60N90D.
In granting the motion, the court held that International Rectifier has a substantial likelihood of establishing the validity of the
applied claims of its 4,959,699 patent and infringement by the Samsung device. International Rectifier chief executive officer Derek
Lidow commented, "We are encouraged that the court is acting quickly and decisively to protect our intellectual property rights."
International Rectifier sued the Samsung companies in January 1998, charging infringement of IR's U.S. Patents 4,959,699 and
4,705,759. IR is proceeding with the litigation and seeks damages and a permanent injunction that prohibits the sale of infringing
Samsung IGBTs and MOSFETs. The Samsung companies are appealing the District Court's preliminary injunction order.
International Rectifier is a major worldwide supplier of components and subsystems that convert electrical power to operate
power supplies, motor drives, and lighting ballasts. Its patented HEXFET® power MOSFETs and IGBTs make IR the world leader in
field effect transistors. IR's technological advances improve the performance and energy efficiency of electronic and electrical
equipment in automotive, consumer, computer/peripheral, industrial, lighting, telecom, and government/space applications.
More Information:
Major International Rectifier Patent Reaffirmed (August 18, 1998)
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