International Rectifier's New Generation of R5 Radiation-Hardened MOSFETs Sets New Performance Standards
IR's R5 MOSFETs for space-based power conversion
systems offer the industry's lowest on-resistance, gate charge and switching times, significantly reducing operating
losses and gate drive requirements while improving switching efficiency.
EL SEGUNDO, CA. April 1998 - International Rectifier (IR) Government and Space Division has made a major breakthrough in
semiconductor process technology for radiation-hardened MOSFETs used in space applications. Their R5
power MOSFETs now achieve the lowest on-resistance, gate charge and switching times in the industry,
which enables the development of more efficient and lower cost power conversion systems for communications satellites
and other space-based electronics systems.
"Our new Mega-RAD family significantly out-performs our competition," said Richard Southwell, Marketing Manager.
"The low on-resistance of our new Mega-RAD MOSFETs will significantly reduce the
conduction losses in space-based power supplies, making them more efficient. The lower gate charge specification of
our new devices permits higher switching frequencies and the use of lower performance device drivers, which allows
power system designers to achieve higher efficiencies and lower overall system costs."
For example, Southwell indicated that a new IRHNA57160 Mega-RAD MOSFET with a size-6 die in a SMD-2 surface-mount
package provides on-resistance and gate charge of 11 milli-ohms and 190 nC, respectively, compared with 40 milliohms
and 310 nC from the previous generation MOSFET. He said that similar improvements are available from the other new
devices in the family.
The new low voltage N-channel Mega-RAD MOSFETs have a guaranteed total dose capability to 1000K RADs (Si)
and a SEGR capability which meets space program requirements and has been tested as high as a LET of 80.
The IRHNA57Z60 (30 volt, die size 6), on-resistance 3.5 milliohms, Mega-RAD MOSFET is available.
Subsequent devices will be released as follows; IRHNA57260SE (200 volt, die size 6), IRHNA57064 (60 volt, die size 6)
and IRHNA57160 (100 volt, die size 6), respectively, all in SMD-2 packages. Information on availability can be obtained
through your local rep. Devices with voltage ratings of 30, 60, 100 and 200 V offer full current ratings of 43 to 75 A. Both
SMD-2 surface-mount and TO-254 through-hole packages can be specified with testing to appropriate JANS levels, as
required. Parts are available off-the-shelf through the QIRL (Qualified IR List) stocking program.
For more information:
Contact the Technical Assistance Center or
your local Sales Rep.
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