INTERNATIONAL RECTIFIER - THE POWER MANAGEMENT LEADER

International Rectifier's New Generation of R5 Radiation-Hardened MOSFETs Sets New Performance Standards

IR's R5 MOSFETs for space-based power conversion systems offer the industry's lowest on-resistance, gate charge and switching times, significantly reducing operating losses and gate drive requirements while improving switching efficiency.

EL SEGUNDO, CA. April 1998 - International Rectifier (IR) Government and Space Division has made a major breakthrough in semiconductor process technology for radiation-hardened MOSFETs used in space applications. Their R5 power MOSFETs now achieve the lowest on-resistance, gate charge and switching times in the industry, which enables the development of more efficient and lower cost power conversion systems for communications satellites and other space-based electronics systems.

IRs Latest Mega-RAD MOSFETs

"Our new Mega-RAD family significantly out-performs our competition," said Richard Southwell, Marketing Manager. "The low on-resistance of our new Mega-RAD MOSFETs will significantly reduce the conduction losses in space-based power supplies, making them more efficient. The lower gate charge specification of our new devices permits higher switching frequencies and the use of lower performance device drivers, which allows power system designers to achieve higher efficiencies and lower overall system costs."

For example, Southwell indicated that a new IRHNA57160 Mega-RAD MOSFET with a size-6 die in a SMD-2 surface-mount package provides on-resistance and gate charge of 11 milli-ohms and 190 nC, respectively, compared with 40 milliohms and 310 nC from the previous generation MOSFET. He said that similar improvements are available from the other new devices in the family.

The new low voltage N-channel Mega-RAD MOSFETs have a guaranteed total dose capability to 1000K RADs (Si) and a SEGR capability which meets space program requirements and has been tested as high as a LET of 80.

The IRHNA57Z60 (30 volt, die size 6), on-resistance 3.5 milliohms, Mega-RAD MOSFET is available. Subsequent devices will be released as follows; IRHNA57260SE (200 volt, die size 6), IRHNA57064 (60 volt, die size 6) and IRHNA57160 (100 volt, die size 6), respectively, all in SMD-2 packages. Information on availability can be obtained through your local rep. Devices with voltage ratings of 30, 60, 100 and 200 V offer full current ratings of 43 to 75 A. Both SMD-2 surface-mount and TO-254 through-hole packages can be specified with testing to appropriate JANS levels, as required. Parts are available off-the-shelf through the QIRL (Qualified IR List) stocking program.



For more information:

Contact the Technical Assistance Center or your local Sales Rep.

 
Search
Submit
Part Search
Site Search
Applications
AC-DC
Appliances
Automotive 
DC-DC
Lighting
NetCom
A&D/HiRel
Audio
Desktop/Server
Enterprise Power
Motor Control
Portables
Company Information Home
About IR
Contact Us
Press Room
Careers
Environmental
Site Index
Investor Relations/Info

Awards
Featured Articles
Print Advertising
Trade Show Calendar
Webcasts
Editorial Contacts
Company News
All News Releases
New Product Releases
New Catalog Additions
Investor News
E-Mail News
RSS Feeds
International Sites: | Chinese 简体中文 | Korean 한국어 | Japanese 日本語 |   About International Rectifier | Contact Us | Privacy   
©1995-2008 International Rectifier