IR's New WARP SpeedTM IGBTs Break Speed Barrier; Replace Large MOSFETs in Many Switching Power Supply Applications
New WARP Speed™
IGBTs allow designers to use smaller, less expensive IGBTs in
place of large-die-size MOSFETs for the same power rating, significantly
reducing component cost without impacting performance in off-line
power conversion applications.
EL SEGUNDO, CA, July 1997 - International
Rectifier (IR) now offers the WARP Speed™ Series of IGBTs
with switching speeds to 150 kHz -- the fastest devices of their
kind available.
This advance in switching speed
allows WARP Speed IGBTs to match the switching characteristics
of MOSFETs up to 150 kHz while retaining their inherent advantage
in higher usable current density over these popular power components.
As a result, designers can now use new WARP Speed IGBTs to replace
MOSFETs -- with much larger die sizes -- in existing off-line
power conversion applications and significantly cut component
cost without impacting overall power system performance.
"The switching speed
breakthrough of our new WARP Speed IGBTs resulted from a proprietary
reformulation in epitaxial silicon producing a major improvement
in turn-off characteristics of the devices, including a reduction
in current tail effects and total switching energy losses,"
explained Chris Ambarian, Director of Switch Strategic Marketing
at IR. "By cutting turn-off switching energy loss in half
when compared with IR's industry leading UltraFast Series of IGBTs,
for example, our new WARP Speed Series virtually doubles the usable
frequency range offered."
"Since IGBTs have always
offered a useable current density of about 2.5 times that of MOSFETs
with the same die area, smaller and, therefore, less expensive
WARP Speed devices can be specified in place of MOSFETs in all
kinds of power conversion applications including power factor
correction circuits, switching power supplies and UPSs,"
he continued. "This will help our customers to lower the
cost of power conversion systems without sacrificing an iota of
performance."
IR's new WARP Speed IGBTs are
designed for voltage ratings of 600 V and current ratings from
5 to 50 A. The first of five devices will be available in sample
quantities in early July, with the remaining part numbers available
in early August. All devices will be available in production
volumes in early Fall 1997.
The initial product offerings are targeted at single-ended topologies:
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