International Rectifier Adds Two New Series of SO-8 Power MOSFETs for Portable Applications
These new Gen5 MOSFET technology allows portable power system
designers to select either lower gate charge for higher
efficiency or lower on-resistance for longer battery life.
EL SEGUNDO, CA. February 1997 International Rectifier (IR) has expanded its
popular SO-8 HEXFET® power MOSFET line-up with the addition of
two new product series for use in portable battery powered electronics.
The new IRF9XXX Series offers improved gate charge characteristics
for improved efficiency in low cost portable electronics applications,
while the IRF73XX Series features lower on-resistance for lower
power dissipation and longer battery life in high performance
portable electronics applications such as laptop computers, PDAS,
and cellular phones.
All of the new devices take advantage of the proprietary 4-mask
process pioneered by International Rectifier for their Generation
5 HEXFET power MOSFETS.
"Our Gen5 HEXFET allows IR to offer cost effective performance
improvements with significant volume manufacturing capability
and short manufacturing times," says Chris Davis, Strategic
Marketing Manager, Battery Management Group at International Rectifier.
"In the IRF9XXX series, Generation 5 HEXFET technology permits
use of smaller die sizes to achieve target power ratings while
maintaining industry standard on-resistance," says Davis.
"This allows -for a dramatic reduction in gate charge resulting
in improved efficiency and longer batter life."
Testing of the new IRF9410, for example, in a simulated laptop
computer dc-dc converter shows a 2% improvement in efficiency
over traditional industry standard devices.
The IRF9410 is a single 30V n-channel device with an RDS(on)
of 0.030 ohms, and a gate charge 46% lower than typical industry
standard alternatives. The IRF9956 is a dual 30V n-channel device
with an RDS(on) of 0.1 ohms and the IRF9953 is a dual 30 V p-channel
device with an RDS(on) of 0.25 ohms. Each offers a 60% lower
gate charge than typical industry standard alternatives. The
IRF9952 is a complimentary 30V device with RDS(on) of 0. IO and
0.25 ohms for n-channel and p-channel devices, respectively.
IR's new IRF73XX series takes advantage of an all new copper lead
frame design to permit use of Gen5 die sizes 40% larger than previously
possible, resulting in substantial reductions in on-resistance
over earlier products.
"These lower on-resistances translate into lower power dissipation
and longer batter life for portable electronics systems,"
says Davis.
N-channel products comprise the IRF7311 at 20V and the IRF7313 at 3OV,
both with an RDS(on) of only 0.029 ohms. P-channel
products comprise the IRF7314 at -20V and the IRF 7316 at -30V,
both offering an RDS(on) of only 0.058 ohms. Complimentary versions
of the devices are also available with the 20V IRF7317 and the
30V IRF7319.
All devices are available in mass production at this time. Further
information on the products can be obtained from IR's Pro Center
at 310-252-7105. Data sheets can be received through IR's Fax-On-Demand
system at 310-252-71 00 and web site (http://www.irf.com).
Pricingfor volumes of 100,000 is as follows:
|
Device |
Fax
On-Demand |
 |
IRF9410 |
91562 |
|
|
IRF9952 |
91561 |
|
|
IRF9953 |
91560 |
|
|
IRF9956 |
91559 |
|
|
IRF7311 |
91435 |
|
|
IRF7313 |
91480 |
|
|
IRF7314 |
91436 |
|
|
IRF7316 |
91505 |
|
|
IRF7317 |
91568 |
|
|
IRF7319 |
91569 |
For more information:
Contact the Technical Assistance Center or
your local Sales Rep.
|
