EL SEGUNDO, CA, December 1996 - International Rectifier (IR), the power semiconductor experts, has added to their 4th generation series of 600 volt ultra fast insulated gate bipolar transistors (IGBTs). These new Gen 4 components improve system efficiency and add a higher level of reliability to power conversion applications, including switch mode power supplies (SMPS), uninterruptable power supplies (UPS), lighting ballasts, welding equipment, and integrated motor control systems. "These devices are optimized for maximum efficiency, in any given frequency range, and are the most efficient devices yet seen in the industry," said Chris Ambarian, Director of Switch Strategic Marketing at International Rectifier.

IR has achieved a 30% overall device performance improvement in efficiency with their Gen 4 IGBTs. "Since many of IR's Gen 3 parts are already industry-standard, best-in-class types, the improved voltage drop of Gen 4 and new, improved, guaranteed specs again propel IR to the forefront of IGBT efficiency," said Ambarian. This is achieved with essentially the same drive requirements, switching behavior, and thermal characteristics as the Gen 3 equivalent devices, allowing "drop-in" compatibility with IR's prior Gen 3 IGBTs.

IR's Gen 4 IGBTs are priced to be the most cost effective devices available today. All of the devices listed are available now off-the-shelf in volume. See the price and performance characteristics for each individual part in the table below. IR's Fax-On-Demand (FOD) system at 310-252-7105 and web site (http://www.irf.com) can be accessed for more detailed information.

IR is able to deliver these parts in quantity thanks to HEXFET America, the world's largest dedicated power MOS fab.

Contact the Technical Assistance Center or your local Sales Rep.