EL SEGUNDO, CA. January 1996 - New Fifth Generation HEXFET^® power MOSFET transistors introduced by International Rectifier Corporation in the SOT-223 surface-mount package offer up to an 80% reduction in on-resistance, a major improvement in performance, for this popular package.

Lower on-resistance, Rds(on), is very important to users because it directly supports more efficient device operation and lower system costs. This specification is critical in design of all advanced equipment and particularly for applications where space is at a premium, requiring surface-mount products. These new SOT-223 HEXFETs^® are the latest devices in the industry's broadest family of small surface-mount products, following recent introduction of the TO-220 and SO-8 packages.

Among the four new N-channel HEXFETs^®, the 55-volt Gen 5 IRLL2705 offers the most significant improvement, a maximum on-resistance of 40 mohm. This specification is 80% lower than the 200 mohm Rds(on) of the existing IRLL014 HEXFET, a comparable 60V device in the SOT-223 package.

Other new SOT-223 N-channel HEXFETs^® include the IRFL4105, with on-resistance specifications of the 45 mohm, which is 78% better than the comparable 60V IRFL014 at 200 mohm, and the 100v IRFL4310 at 200 mohm, 63% lower than the IRFL110, at 540 mohm. The new 30V IRLL3303, the first to be offered by IR at this rating, has maximum on-resistance of 31 mohm. Overall, these ratings represent industry-leading specifications for SOT-223 packages in volume production.

Fifth Generation devices in the SOT-223 package are ideal for applications in automotive and portable electronics equipment, two of the fastest growing segments of the power transistor market. One example is automotive airbag systems, which are expected to more than double in units by end of the decade. A single SO-223 power switch will be required for each unit to meet tight space constraints. In portable electronics, a common application is disk drive motors for laptop computers, where low Rds(on) is critical to prolong battery life. Here, multiple SOT-223s are deployed in a 3-phase bridge configuration to drive the spindle motor.

The improved performance of the SOT-223 devices gives them the potential to replace larger, more expensive packages such as the D-Pak, in certain applications. SOT-223s are also a less expensive alternative to the SO-8 package, handling higher load currents and dissipating more heat in sockets requiring higher power devices. Other SOT-223 applications are expected to be found in both DC/DC converters and synchronous rectification.

This new Fifth Generation of HEXFETs^® includes both N-channel and P-channel power types. Based on the fundamental HEXFET structure pioneered by International Rectifier, the development employs advanced process techniques to increase cell densities and reduce line geometries in establishing Rds(on) benchmarks not attainable by existing power MOSFETs.

Production of the advanced HEXFET generation is taking place in International Rectifier's $200 million wafer fabrication facility at Temecula, CA., where expansion continues. When fully completed in 1997, the Company's power transistor wafer capacity will be more than doubled.

The new devices in the SOT-223 package are now available for sampling. Volume quantities will be available during 1996.

Contact the Technical Assistance Center or your local Sales Rep.