|
Fifth Generation International Rectifier HEXFET® Sets New Performance Benchmarks
EL SEGUNDO, CA.--- The new Fifth Generation of HEXFET(R)
power MOSFET transistors developed by International Rectifier
Corporation achieves significant reductions in the critical on-resistance,
Rds(on), rating compared to similar chip sizes of existing
devices. Reductions of more than 65% are attained for N-channel
and P-channel MOSFETs.
These HEXFET devices offer maximum Rds(on) ratings down to
6milliohms, the lowest presently available, establishing performance benchmarks
for power MOSFETs. Lower on-resistance is very important to users
because it directly supports more efficient device operation and
lower system costs.
The new family of power MOSFETs ranges from 20volts up to
150 volts. Based on the fundamental HEXFET structure pioneered
by International Rectifier, the development employs advanced process
techniques to increase cell densities and reduce line geometries
in attaining the Rds(on) improvement over present products.
The initial 55V product, the N-channel IRF3205, is offered
in the popular TO-220 package with industry-pacing Rds(on) rating
of 8milliohms. It can replace up to three existing devices in parallel
configuration, such as the IRFZ48 at 18milliohms, and deliver the same
Rds(on) performance. Also available is the 30V series, featuring
the IRL3803, with on-resistance down to 6milliohms, and 4.5V and 10V Vgs
gate drive options.
Improvements achieved in P-channel HEXFET power MOSFETs are
even more significant than in N-channel devices. The new P-channel
on-resistance ratings are now about two times an N-channel device
of similar size, compared to previous generations which were three-four
times higher. For example, the new HEXFET IRF4905 is a 55V P-channel
device in a TO-220 package with on-resistance of only 20milliohms, which
betters by 85% the IRF9234, at 140milliohms.
"It is expected that cost and performance improvements
possible with this new technology will stimulate penetration of
power MOSFETs into new markets," stated Gene Sheridan, Director
of Strategic Product Marketing. The emerging market segments addressed
by the new HEXFET products are among the most dynamic in power
transistors, with projected growth rates of more than 35% annually,
according to Sheridan.
An important segment is electronic power steering in automobiles,
which requires the higher currents and lower costs that can be
delivered by the new International Rectifier devices. Other emerging
applications include synchronous rectification for power supplies
and the cost effective use of P-channel HEXFET devices in high-side
switching in place of N-channel devices that need external charge
pumps.
Production of the advanced HEXFET generation is taking place
at International Rectifier's new $75 million wafer fabrication
facility at Temecula, CA., adjacent to the existing plant. When
full volume production is reached in 1996, this new fab will increase
the Company's wafer capacity by 75%.
All of the new International Rectifier HEXFET generation
devices are available for sampling. Datasheets are available through the IR FAX-on-demand
service at 310/252-7105 (North America).
For more information:
Contact the Technical Assistance Center or
your local Sales Rep.
|
