EL SEGUNDO, CA.-- By employing advanced ceramic seal feedtrhough technology in the hermetric TO-257AA package, International Rectifier Corporation is expanding its line of industry-leading high reliability HEXFET(R) power MOSFET transistors.

These latest additions to the Company's family of products that serve government, aerospace and defense applications include 10 advanced HEXFETs, along with four devices manufactured with the proprietary MEGA RAD HARD process.

All of the HEXFETs are housed in the TO-257AA package incorporating ceramic seal feedthrough technology. These packages meet the MIL-S-19500 directive for ceramic seals and offer significant advantages over glass seal packages whose brittle properties may deteriorate in harsh environments.

These new HEXFETs, both N-channel and P-channel, are offered in a 60V to 500V range with on-resistance (Rds-on) down to 40 mohm. Rated to 100 watts, the new products fill a gap that exists between low power (less than 20W) TO-39 packages and high power (150W) TO-254AA packages. Weighing less than five grams, the products are ideally suited for applications requiring high power dissipation capability in a space-saving configuration.

For space applications, the four MEGA RAD HARD HEXFETs are available in both N- and P-channel configuration. These devices are radiation hardened up to 1 x 10 to-the sixth, Rad (Si)/second and have demonstrated virtual immunity to single event effect (SEE) failure. RAD HARD devices are characterized with identical pre-and post-radiation test conditions.

The new HEXFET family additions are well suited for such high reliability applications as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Contact the Technical Assistance Center or your local Sales Rep.