EL SEGUNDO, Calif. - International Rectifier, IR® (NYSE: IRF), introduces a new automotive-specific, trench HEXFET® power MOSFET technology with 15% lower device on-resistance per unit area than the best-competing technology and excellent avalanche capability. The new MOSFET technology offers an avalanche capability comparable to industry-leading planar technology and up to twice that of currently available trench products.

"The IR trench process extends the improvements in electrical efficiency provided by the trench technology to the harsh automotive environment without sacrificing the avalanche ruggedness that automotive system designers have come to expect from planar MOSFETs," said Tony Hendrix, Director, Automotive Components Business Development at International Rectifier.

The first product using this new trench technology is the Q101-qualified, 40-volt IRF2804 MOSFET suitable for high power automotive applications such as14V integrated starter alternators, 14V synchronous rectifier alternators, electrical power steering systems, and brush- and brush-less DC motor controls. The IR trench MOSFET technology will rapidly be extended to the other voltages that can be found in automotive applications with 40-volt, 55-volt, 75-volt and 100-volt products.

The new IRF2804 automotive trench MOSFET offers the industry-lowest on-resistance of 2.3 milliohm in the TO-220 package. In addition, the new IRF2804 has low gate charge per unit area, required for high frequency operation up to 100kHz.

The high avalanche capability of IR's automotive trench MOSFETs allows a lower voltage-rated device to be used in an application. For example, a 40-volt MOSFET can be used instead of a 55-volt MOSFET, taking advantage of the intrinsic lower on-resistance, as long as device maximum junction temperature is not exceeded. IR's new automotive trench MOSFETs deliver silicon performance previously unachievable without utilizing a more expensive package, larger die or multiple dies in parallel.

IR's automotive trench MOSFETs also include 10% lower on-resistance temperature coefficient than competitive devices, which is particularly important in automotive applications where the nominal operating temperatures usually exceed 125°C and peak junction temperatures may approach 175°C.

Part Number	BVDSS	RDS(on) @ 10V	Current @25°C	Package
IRF2804	40V	2.3 mOhms	75A	TO-220
IRF2804L	40V	2.3 mOhms	75A	TO-262
IRF2804S	40V	2.3 mOhms	75A	D2-Pak

Notes:
T J(max) = 175°C The IRF2804 in the TO-220 package is Q101-qualified.

Pricing and Availability
Samples of the IRF2804 are available now. Pricing is US $3.67 each in 10,000-unit quantities.

High Resolution JPEGs are available in the Press Room.