|
International Rectifier Introduces 150V and 200V MOSFETs That Increase Total Efficiency by 1% in Isolated DC-DC Converters
EL SEGUNDO, Calif. - International Rectifier, IR® (NYSE: IRF) today introduces a new series of 150V and 200V HEXFET® power MOSFETs with optimized device on-resistance and gate charge characteristics that increase efficiency by up to 1% in 48V input isolated DC-DC converters for networking and telecommunication systems. The new MOSFETs deliver up to 20% higher current carrying capability than the closest competing devices in a TO-220 package. The new devices are also available in the D2Pak and TO-262 packages.
The IRFS38N20D and the IRFS52N15D are suitable for primary side sockets in single output, board mounted power (BMP) modules or in multiple output power supplies. The new devices can also be used in "hot swap" circuits and active OR-ing circuits, ensuring reliable system operation.
In a typical 150W half-brick module, the new 200V IRFS38N20D delivers 91.5% efficiency at 5VOUT and 30A load, 1% higher than the industry standard device. The new IR device also runs 28°C cooler than the competing device. The lower operating temperature enables circuits to occupy a smaller PCB since less area is required to dissipate heat. Efficiency measurements using the new 150V IRFS52N15D on the primary side yielded similar results.
"The higher current carrying capability of the new MOSFETs allows more power to be delivered to the secondary side. Designers can increase output power and efficiency in the same form factor or reduce solution size while maintaining output power," said Carl Smith, Marketing Manager for Networking and Telecommunication Products at International Rectifier.
Telecom systems are required to have superior "up-time" performance. In order to meet these demands, circuit boards may have to be changed while the power is still on. To limit in-rush current, during circuit board insertion, the controller in the hot-swap circuit must slowly turn the FET on. IR's HEXFET MOSFET technology enables better control during the linear region of operation due to low transconductance, preventing hot spots on the die that can cause failures and system "down-time."
"The new HEXFET power MOSFETs are ideal inrush current limiters in hot-swap circuits, ensuring reliable operation as routine maintenance is performed on redundant power systems," Smith added.
Pricing and Availability
The new devices are available immediately. Pricing begins at US$1.10 each for the IRFS38N20D and the IRFS52N15D in the D2Pak in 10,000-unit quantities.
For more information:
Contact the Technical Assistance Center or
your local Sales Rep.
High Resolution JPEGs are available in the Press Room.
|