International Rectifier Boosts HEXFET® Power MOSFET Current Capability by 30%

EL SEGUNDO, CA, January 2002 - International Rectifier, IR® (NYSE: IRF), today introduced the new 100V, IRFB4710 and IRFS4710 HEXFET® power MOSFETs that increase power density in 48V input, half- or full-bridge topologies used in the high performance DC-DC converters required for telecom and datacom equipment.

The new IRFB4710 device is rated at 75A in the TO-220 package, or 30% higher current than previous generation devices. This means that designers can shrink the size, weight and cost of power supplies by paralleling fewer devices to achieve desired current ratings. With the growth in the volume of data transmitted, telecommunication and data communication equipment power consumption continues to rise. The DC-DC converters providing these increasing power levels must do so in the same or smaller footprint.

The new IRFB4710 and IRFS4710 MOSFETs have a 40% lower on-resistance, or RDS(on), than previously available devices, resulting in higher efficiency and lower operating temperature. In-circuit testing shows that four IRFB4710s run 20°C cooler at 350W compared to industry-standard devices. With significant space and operating costs currently devoted to keeping telecom equipment from overheating, these new devices offer the opportunity to reduce heat sink size and cooling cost. Cooler running systems increase reliability, which is critical to an industry that cannot afford to have equipment down when so many people depend on 100% service availability.

Jorge Llorens, International Rectifier Marketing Manager for Netcom/Datacom Products, DC-DC Sector, said, "The new IRFB4710 MOSFET offers a new alternative to designers of high performance telecom/datacom DC-DC power systems. The IRFB4710 device can be used to shrink power supply size, weight and cost by increasing the power density in watt per cubic inch. The IRFB4710 can also be used to increase reliability by reducing power supply temperature. International Rectifier once again is proving its commitment to the telecommunication and data communication industry by providing leading edge technology."

The IRFS4710 MOSFET, in a D2Pak package, is optimized for 100 to 300 watt, board mounted power systems. The IRFB4710, in a TO-220 package, is designed for 3kW to 5kW shoe-box type power supplies used in wireless base stations.

Pricing and Availability

Pricing for the new IRFB4710 family begins at US $0.90 each. The devices are available immediately.

Part Number VDSS
(V)
RDS(ON)
(mOhms)
ID@ 25C
(max) (A)
QG @10VGS
(typ) (nC)
QGD
(nC)
Package Type
IRFB4710
IRFS4710
IRFSL4710
100 14 75* 110 40 TO-220
D2Pak
TO-262

* Package capacity

For more information:

Contact the Technical Assistance Center or your local Sales Rep.

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