INTERNATIONAL RECTIFIER - THE POWER MANAGEMENT LEADER

International Rectifier Doubles Current Density in New HEXFET® Power MOSFETs for Networking and Communications DC-DC Converters

EL SEGUNDO, CA, October 2001 - International Rectifier, IR® (NYSE: IRF) introduces three new high current, 150V and 200V rated HEXFET® power MOSFETs optimized for the primary side of 48V isolated DC-DC converters that power the latest broadband networking equipment. The new MOSFETs deliver up to 100% more current and have up to 50% lower on-resistance than competing devices in the same footprint. These performance improvements provide the highest efficiency for the primary side and result in up to 25 degrees C lower operating temperature compared to previous generation devices.

Higher current level reduces or eliminates the need to parallel multiple devices, resulting in simpler designs, smaller size and lower part count. With a lower running temperature, these MOSFETs require smaller heat sinks, which further decreases the converter's size. The designer can leverage these benefits to increase the power level in an existing design's form factor. Lower device operating temperature also translates into longer life to meet the requirements of a market whose customers expect 100% service availability.

Jorge Llorens, Marketing Manager for Networking and Communication products at IR, says, "Faster microprocessor speeds and wider bandwidths push power density and reliability requirements to higher levels. IR's HEXFET MOSFETs deliver the next level of current density at lower operating temperature than competing devices in similar packages."

Technical Highlights

The three new devices are the 200V, 94A IRFBA90N20D in a Super-220ä, the 200V, 94A IRFP90N20D in a TO-247 and the 150V, 61A IRFB61N15D in a TO-220.

Both the IRFP90N20D and the IRFBA90N20D have industry leading performance with an on-resistance (RDS(on)) as low as 23 mOhms. The Super-220™ package of the IRFBA90N20D has an extended lead-frame that enables it to carry currents of up to 94A in the same outline as a standard TO-220.

The IRFB61N15D also offers 10% lower RDS(on) and 20% higher current handling capability than the nearest competing device in a TO-220 package, thus increasing efficiency and power density.

Pricing and Availability

The new IRFBA90N20D, IRFP90N20D and the IRFB61N15D are available now. Pricing in 10,000-unit quantities is US$ 1.21 for the IRFB61N15D, US $3.25 for the IRFBA90N20D and US$ 3.39 for the IRFP90N20D.

Specifications

Part Number BVDSS
(V)
RDS(on) max @10V
(mOhms)
Package VGS
(V)
ID @ 25°C Qg typ
(nC)
Qgd typ
(nC)
Typical Application
IRFB61N15D 150 32 TO-220 20 60 95 45 Primary side MOSFETs in Isolated DC-DC Converters
IRFBA90N20D 200 23 Super-220tm 20 94 180 87
IRFP90N20D 200 23 TO-247 20 94 180 87


For more information:

Contact the Technical Assistance Center or your local Sales Rep.

High Resolution JPEGs are available in the Press Room.

 
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