EL SEGUNDO, CA. August 2001 - International Rectifier, IR® (NYSE: IRF) introduces two innovative, space-saving devices for high-reliability (hi-rel) power management circuits in spacecraft, launch vehicle and weapon system applications.

The new radiation-hardened (RAD-Hard™) synchronous MOSFET rectifiers combine a HEXFET® MOSFET and high efficiency IR Schottky rectifier into one package (a "Co-Pack"). The new devices are designed to fill the demand for small and efficient devices in space-level power management circuits.

The trend in hi-rel digital power systems such as memory and microprocessor devices continue to demand lower operating voltages, from 3.3V to 2.5V and 1.8V. At the same time, current ratings have risen to the range of 20 to 30A or more.

Richard Southwell, International Rectifier HiRel Components Group Marketing Manager, said, "The new hermetically sealed co-packaged Schottky rectifier/switching MOSFET devices are extremely efficient and reliable for DC-DC converter and power management circuits requiring as much as 75 amps. The new devices reduce component count, size and weight in hi-rel DC-DC power management applications."

Technical Highlights
In typical DC-DC converter applications, a Schottky rectifier is placed in parallel with a synchronous MOSFET (sync FET) to conduct current and avoid current shoot-through. IR's sync FET/Schottky diode Co-Pack devices shrink package count by one. Co-packaging also decreases MOSFET-to-Schottky diode wiring inductance in high frequency applications.

The new IRHSNA57Z60 and IRHSNA57064 have a synchronous N-channel RAD-Hard HEXFET power MOSFET co-packaged with an efficient Schottky rectifier. The new devices replace output Schottky rectifiers in DC-DC converters with output current requirements up to 75A.

The new devices are packaged in the hermetically sealed surface-mount SMD-2 package, and can be ordered on a carrier to facilitate assembly integration.

Pricing and Availability
The new IRHSNA57Z60 is available immediately, while the IRHSNA57064 is expected to be available in September 2001. Pricing is US $278.74 each in 500-unit quantities.

Part Number	VDS	VGS	ID	RDS(on)	QG	VSD
IRHSNA57Z60	30V	±20V	75A	4.0mOhms	200nC	1.05V @ 45A
IRHSNA57064	60V	±20V	75A	5.6mOhms	140nC	0.9V @ 45A

Trademark Notice
IR^® and HEXFET^® are registered trademarks of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders.